Integration of a Passive-Type UHF RFID Tag Using Ferroelectric Memory Technology

Park, Hae-Chan; Son, Young–Jin; Cho, Sung‐Sil; Lee, Ae-Kyoung; Lee, Baekhee; Park, Sang‐Hyun; Kim, Yun Joong; Choi, Jihye; Hwang, Soon B.; Park, Nam-Kyun; Chang, Heon-Yong; Kang, Hee-Bok; Hong, Suk-Kyoung

doi:10.3938/jkps.51.779

Cited by 3 publications

(2 citation statements)

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“…Industry RFID antenna assembly experts have experienced RFID tag product losses due to ESD damage. Damage to RFID tag chip [7][8][9] by the ESD event is determined by the device's ability to dissipate the energy of the discharge or withstand the voltage levels involved. ESD event can occur when any charged conductor including the human body model (HBM) discharges to RFID tag chip.…”

Section: Introductionmentioning

confidence: 99%

Bidirectional Floating-Base BJT Esd Protected Rfid Chip

Kang¹,

Lee²,

Ki³

et al. 2010

Integrated Ferroelectrics

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The maximum peak-to-peak radio frequency (RF) signal antenna voltage level can be extended to reach to over 12 Vpp, −6 V to +6 V. Thus it is desirable that the electrostatic discharge (ESD) device does not turn on at the normal operating RF antenna signal voltage level. The turn-on threshold negative voltage of the ESD device of the PN diode type is around −0.5 V in the conventional radio frequency identification (RFID) chip. The asymmetric threshold voltage characteristics of the ESD device of the RFID chip makes the distortion of the RF antenna signal at the high intensity RF input field. In the proposed floating base vertical PNP ESD device, N-type doped N-WELL floating base is sandwiched between two p-type P+ emitter and P-WELL collector. Floating base BJT ESD device enhances the performance of parasitic BJT current in the ESD mode. During the negative voltage phase of RF antenna input signal, the negative voltage of RF antenna input is extended to around −10 V. This extension of RF antenna input operation voltage range makes to prevent from any distortion of RF antenna signal at the high RF input field. The measured HBM ESD protection level of the floating base BJT ESD device is over 2000 V with the P+ anode layout area of 400 µm 2 .

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Section: Introductionmentioning

confidence: 99%

Bidirectional Floating-Base BJT Esd Protected Rfid Chip

Kang¹,

Lee²,

Ki³

et al. 2010

Integrated Ferroelectrics

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“…Damage to RFID tag chip [3,4] by the ESD event is determined by the device's ability to dissipate the energy of the discharge or withstand the voltage levels involved. ESD event can occur when any charged conductor including the HBM discharges to RFID tag chip.…”

Section: Introductionmentioning

confidence: 99%

Floating-Base BJT Type Esd Device for Rfid Chip

Chung

Kang²,

Hong³

et al. 2009

Integrated Ferroelectrics

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N-WELL floating base is sandwiched between P+ emitter and P-WELL collector in the proposed floating base vertical PNP electro-static discharge (ESD) protection device. Floating base bipolar junction transistor (BJT) ESD protection device increases the current performance of the parasitic BJT in the ESD mode. During the negative voltage phase of RF antenna signal, the negative voltage range of RF antenna signal is extended to around −10 V at the high RF power field without latch-up failure. The minimum P+ anode layout area of the floating base type BJT ESD device is 400 µm 2 for the target ESD voltage of 2000 V in human body model (HBM) mode. The parasitic capacitance of the floating base type BJT ESD protection device is about 0.4 pF. The layout area of the proposed floating base type BJT ESD protection device is 50% smaller that of the conventional NMOS diode type ESD protection device for the target ESD voltage of 2000 V in HBM mode. The rewards of the floating base type BJT ESD device will come in the form of improved yields, higher reliability, and substantially lower costs of RFID chip manufacturing.

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Ferroelectrically Switchable Axial Polarization in Columnar Liquid Crystalline Phases

Nguyen

Cho

2020

Chemistry A European J

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Recently, ferroelectrically switchable columnar LCs have drawn a great deal of attention for their generation of rich polarization domains. Because of their unique dielectric and self‐assembly properties, they are considered to be a promising material for the design of sensors and ultra‐high memory devices. Herein, ferroelectrically switchable LCs by using ester, amide, and 1,2,3‐triazole groups are reviewed. Most of them do not exhibit genuine ferroelectricity owing to the low energy barrier between the two polar states. The intermolecular interactions between polar groups strongly affect the switchability and stability of polarization. Therefore, it is challenging to balance these two competing factors to improve the ferroelectric function in columnar LCs. Overall, additional effort, including LC design and device fabrication, should be made to optimize the material performance for practical applications in the future.

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Integration of a Passive-Type UHF RFID Tag Using Ferroelectric Memory Technology

Cited by 3 publications

References 0 publications

Bidirectional Floating-Base BJT Esd Protected Rfid Chip

Bidirectional Floating-Base BJT Esd Protected Rfid Chip

Floating-Base BJT Type Esd Device for Rfid Chip

Ferroelectrically Switchable Axial Polarization in Columnar Liquid Crystalline Phases

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