Integration of artificial SrTiO3/BaTiO3 superlattices on Si substrates using a TiN buffer layer by pulsed laser deposition method

Effects of Mg doping concentration on the band gap of ZnO/Mg x Zn1−x O multilayer thin films prepared using pulsed laser deposition method

“…On the other hand, it has been well known that the artificial engineering of oxide and semiconductors for functional devices applications is possible by formation of multilayer thin films that show superior electrical and optical properties than the conventional single layer thin films [9,10] [12].…”

Effects of periodicity and oxygen partial pressure on the crystallinity and dielectric property of artificial SrTiO3/BaTiO3 superlattices integrated on Si substrates by pulsed laser deposition method

“…It has been well known that STO/ BTO superlattices have higher dielectric constant compared with BTO, STO, (Ba,Sr)TiO 3 thin films because of the strain effect induced by the lattice mismatch between the BTO and STO layers. [1,3,13,17] Tabata et al reported that dielectric constant of the STO/BTO superlattice grown on SrTiO 3 substrates increases with decreasing stacking periodicity in the stacking range between 10 nm and 0.8 nm [17]. Kim et al [3] also reported that the non-linear dielectric property of the STO/BTO superlattice grown on MgO substrates by PLD can be improved with decreasing the stacking periodicity.…”

“…[13] However, more systematic study on the STO/BTO superlattices on Si has not been done yet. Therefore, the purpose of this study is to report the effects of periodicity and oxygen partial pressure on the crystallinity and dielectric property of artificial STO/BTO superlattices on Si substrates for better understanding and improving the characteristics of STO/BTO superlattices on Si substrates.…”

Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

“…In contrast to these previous studies, in this paper, a single TiN layer has been used to get both in- and out-of-plane polarization in epitaxial BaTiO 3 on Si. The use of epitaxial TiN as a buffer layer offers easier integration of BaTiO 3 − or other perovskite oxides − (3.80–4.10 Å) with Si(100) for a number of reasons. To begin with, the growth of TiN can be done under conditions that prevent the formation of the amorphous Si-oxide layer that is detrimental to epitaxy.…”