Integration of BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Abstract

SrTiO3 films on GaAs, grown by molecular beam epitaxy, serve as buffer layers for epitaxial growth of ferromagnetic or multiferroic films using pulsed laser deposition.

Ferroelectric Phase Transition Induced a Large FMR Tuning in Self-Assembled BaTiO3:Y3Fe5O12 Multiferroic Composites

“…These pillar–matrix interfaces are crucial in composite films, especially for the ferromagnetic and ferroelectric coupling system, where the ME coupling effects at these interfaces strongly depend on the interfacial conditions. , Cross-sectional STEM-HAADF image of a selected BTO pillar within the YIG matrix is demonstrated in Figure a, and its chemical composition is identified by EDS mapping, as shown in Figure S1. The sharp distribution of elements (Ba, Y, and Fe) further confirm that BTO and YIG phase are absolutely separated in the composite.…”