Integration of crystalline orientated γ-Al2O3 films and complementary metal–oxide–semiconductor circuits on Si(1 0 0) substrate

In this work, a study comprising the electrical characterization and analysis of the electrical response of metal–insulator–semiconductor Al/Al2O3/Si capacitors in a temperature range from ambient temperature down to 3.6 K is presented. An ultra-thin 6 nm Al2O3 film, deposited by atomic layer deposition, was used as an insulating layer. Current–voltage and electrical stress measurements were performed on the capacitors in the specified temperature range, and the experimental data obtained were analyzed using current transport equations to model the conduction mechanisms that allow charge transport through the Al2O3. Energetic parameters associated with trap levels within the Al2O3 bandgap corresponding to the Poole–Frenkel emission and trap-assisted tunneling mechanisms were obtained, and their temperature dependances were studied and associated with the presence of physical material defects. The analysis of the modeling results points to trap-assisted tunneling as the dominant mechanism at low temperatures for intermediate electric field values. Additional phenomena that limit charge transport were also observed, such as charge trapping in the bulk of the Al2O3 upon the application of electrical stress at ambient temperature and silicon freeze out at cryogenic temperatures. Our findings constitute an effort at understanding the physical phenomena that govern the electrical behavior of thin-film Al2O3-based capacitors, especially at cryogenic temperatures, given that these materials and devices are of considerable importance for applications in CMOS-based cryoelectronics and quantum technologies, among others.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Integration of crystalline orientated γ-Al2O3 films and complementary metal–oxide–semiconductor circuits on Si(1 0 0) substrate

Cited by 3 publications

References 19 publications

Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties

Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties

Effect of thermal annealing on the optical and structural properties of γ-Al2O3 films prepared on MgO substrates by MOCVD

Carrier conduction mechanisms in MIS capacitors with ultra-thin Al2O3 at cryogenic temperatures

Contact Info

Product

Resources

About