Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Abstract

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and electronic device applications, particularly in state-of-the-art complementary metal oxide semiconductor (CMOS) logic circuits and digital information storage media. Recent unprecedented advancements and future perspectives on integrating ferroelectric materials, particularly with high-κ dielectrics for electronic devices, are weighed. The emphasis is on (i) application (logic and memory); (ii) ferroelectric materials (organic, inorganic, and two-dimensional (2D)); (iii) device structures (metal/ferroelectric/metal (MFM), metal/ferroelectric/semiconductor (MFS), metal/ferroelectric/insulator/semiconductor (MFIS), and metal/ferroelectric/metal/insulator/semiconductor (MFMIS)); and (iv) next-generation electronic devices (negative capacitance field effect transistors (NC-FETs), ferroelectric RAM (FeRAM), ferroelectric field effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs)). In NCFETs, the ferroelectric layer serves as a negative capacitor so that the channel surface potential can be amplified more than the gate voltage. Hence, devices can overcome the “Boltzmann tyranny” and operate with a steep subthreshold swing < 60 mV/dec and supply voltage < 0.5 V. Thus, NC-FETs would be more suitable for high-speed logic operations, scalability, low-power, and cost-effectiveness, targeting applications such as 14T-type CPU registers and 6T-type cache static random access memory (SRAM). Ferroelectrics also opens a path to solving the problems associated with technology scaling due to the unique structural and electronic properties. Ferroelectric memories are anticipated to be in different flavors based on optimum performance, cost, and end-user requirements. Herein, we deliberate on the exciting possibilities for the development of device structures such as one-transistor one-capacitor (1T-1C)-type FeRAM with fast access time (<10 ns), high endurance (∼>1014 cycles), and moderate data retention being considered as a strong contender for volatile dynamic random access memory (DRAM), while, for nonvolatile memory applications, 1T-type ferroelectric gated transistors, called FeFETs with nondestructive readout, fast access time (∼<100 ns), moderate endurance (>109 cycles), and high retention time (>10 years) have the potential to compete with embedded solid-state drives (SSDs). Finally, the FTJs with three-dimensional cross-point architecture are strong contenders for high-density niche storage applications to interchange with low-cost per bit external hard disk drives. We conclude with a brief survey of recent ferroelectrics advances and potential futuristic comparisons for next-generation computing and storage device applications so the field may expand and pave the way for high-volume manufacturing of semiconductor technology down to the sub-5 nm node over the coming years.

Roadmapping of Nanoelectronics for the New Electronics Industry

“…Will these technologies remain the main ones for the next decades? Indeed, substantial research efforts have been performed these last two decades for novel devices using new materials such as phase-change and resistive ones, novel physical mechanisms, such as TFETs (Tunnel FETs) and NCFETs (Negative Capacitance Ferroelectric FETs) and alternative technologies, including 3D integration, bottom-up process and alternative architectures (neuromorphic computing, quantum computing) [15][16][17][18][19][20][21][22].…”

Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

“…The unique properties of ferroelectric materials have been exploited to date in numerous integrated devices such as Ferroelectric Random Access Memories, Ferroelectric Field Effect Transistors, Negative Capacitance Field Effect Transistors, and Ferroelectric Tunnel Junctions (FTJs). [ 1 ] The discovery of ferroelectricity in Si‐doped hafnium oxide in 2011 [ 2 ] gave a significant boost to research on the topic. Although other successful dopants have been found, [ 3 ] the solid solution (HZO) has attracted a lot of interest.…”

Design and Analysis of Negative Capacitance Assisted SRAM: A Compact Model Based Study

“…So, in order to reduce overheads, researchers must evaluate SRAM-assist techniques on numerous levels, which includes: utilizing new materials, exploring device structure topologies, optimizations of process, and different circuit assisted techniques. Ferroelectric materials-based transistors [13]h a v e gotten a lot of interest recently for their ability to provide ultra-low power in memory and steep switching applications due to the negative capacitance property exhibit by ferroelectric materials. These devices have gotten a lot of interest because of their simpler design and CMOS compatibility [14], compared to other state-of-the-art devices such as TFETs [15], HyperFETs [16], and Hybrid FETs [17][18][19].…”