Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off

Wong, William S.; Wengrow, A. B.; Cho, Y.; Salleo, Alberto; Quitoriano, Nathaniel J.; Cheung, N.W.; Sands, T.

doi:10.1007/s11664-999-0131-x

Cited by 56 publications

(20 citation statements)

References 10 publications

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“…7 The thermocouple was calibrated using a bead of In and observing its melting temperature. All temperatures were maintained to within ±5∞C during the anneal.…”

Section: Methodsmentioning

confidence: 99%

“…6 The TLP approach has been adapted by the authors and their colleagues for lowtemperature (£200∞C) joining of thin films to a variety of dissimilar substrate materials, including polymers. 7 In low-temperature TLP bonding, a bilayer metallization such as Pd/In is designed to exploit the best features of both conventional solid-phase bonding (e.g., Au cold welding) and conventional liquid-phase bonding (e.g., solder bump bonding). In this process, the low-melting-point component, In, is sandwiched between thin films of the higher-melting-point component, Pd.…”

Section: Introductionmentioning

confidence: 99%

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Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

Quitoriano

Wong

Tsakalakos

et al. 2001

Journal of Elec Materi

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The kinetic behavior of the Pd/In bilayer reaction is analyzed, with emphasis on the effect of nanometer-scale diffusion barriers at the Pd/In interface. It is shown that the Pd/In reaction proceeds rapidly and without a discernable incubation period at temperatures below 200∞C if the Pd/In interface is nominally free of either contamination or intentionally-deposited intervening layers. Air exposure of the Pd surface prior to In deposition is sufficient to delay the onset of the reaction to produce the intermetallic phase by PdIn 3 for several minutes at 200∞C. This incubation period can be further controlled by deposition of a nanometer-scale Ti layer onto the Pd prior to air exposure and In deposition. The implications of these results for the design of transient-liquid-phase waferbonding processes based on Pd-In are discussed.

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“…7 The thermocouple was calibrated using a bead of In and observing its melting temperature. All temperatures were maintained to within ±5∞C during the anneal.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

Quitoriano

Wong

Tsakalakos

et al. 2001

Journal of Elec Materi

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“…It has been shown to induce damage in the separated film only within 50 nm from the interface [11], as was expected from calculations [12,13]. Mechanical considerations led to the development of bonding methods [14,15] and to analyses of the parameters to adopt to minimize damage [16].…”

mentioning

confidence: 92%

A Mechanistic Study of GaN Laser Lift-Off

Bret

Wagner

Dennis

et al. 2002

phys. stat. sol. (a)

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We present a study of the influence of the optical parameters on the pulsed KrF (248 nm) excimer laser‐induced delamination of a GaN–sapphire interface. Monitoring the density of Ga droplets produced at the interface upon irradiation by optical microscopy, we show that the decomposition of GaN has a precisely defined fluence threshold, observed only when using double‐polished sapphire substrates. The laser intensity at the interface depends strongly on the roughness of the sapphire backside. For single‐polished sapphire wafers, no precise decomposition threshold fluence is defined due to speckle formation at the interface. Fine‐tuning of the process allows partial interface decomposition.

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“…Out of the three fastest reacting systems, Zr-Sn is the one with the highest theoretical remelting temperature of 1,142°C at the peritectic of ZrSn 2 . 14 Recently Pd-In low-temperature thin-film bonding, actually diffusion soldering, was used by Wong et al [15][16][17] to bond GaN thin films at 200°C bonding temperature and heating times up to 60 min. The intermetallic phase, 'PdIn 3 ', was found to form during that process from e-beam evaporated Pd and In films.…”

Section: Introductionmentioning

confidence: 99%

Phase formation and diffusion soldering in Pt/In, Pd/In, and Zr/Sn thin-film systems

Studnitzky

Schmid–Fetzer

2003

Journal of Elec Materi

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Potential candidates for thin-film diffusion soldering were investigated by analysis of phase formation and measurements of mechanical and thermal stability of thin-film bonds. Bilayers of Pt/In, Pd/In, and Zr/Sn of 500 nm/500 nm thickness were prepared by direct current magnetron sputtering followed by a 5 nm, thin protective Au layer. Single bilayer samples were heat-treated between 200°C and 500°C for 3-30 min and studied by x-ray diffraction (XRD) analysis. Some bilayers were bonded face-to-face between 300°C and 500°C for 3-30 min and sheared-off either in shear-strength measurements at room temperature or in remelting experiments up to 1,100°C. Phase formation in Pd/In and Pt/In thin films is much faster than in Zr/Sn thin films. An interaction of Au in addition to a questionable thermal stability of PtIn 2 complicated the reaction in Pt/In samples. A revised partial Pd-In phase diagram was constructed, correcting the compound 'PdIn 3 ' to Pd 3 In 7 . The Pt/In and Pd/In thinfilm systems are very promising candidates for thin-film diffusion soldering.

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Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off

Cited by 56 publications

References 10 publications

Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

A Mechanistic Study of GaN Laser Lift-Off

Phase formation and diffusion soldering in Pt/In, Pd/In, and Zr/Sn thin-film systems

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