2012
DOI: 10.1038/nphoton.2011.352
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Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres

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Cited by 110 publications
(95 citation statements)
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“…Current approaches include the molten core drawing or high-pressure CVD with post-annealing process, leading to the demonstration of in-fibre semiconductor devices 15,17,23,30 . Here we characterize the electric performance of the Si core fabricated by the fibre-draw synthesis method.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Current approaches include the molten core drawing or high-pressure CVD with post-annealing process, leading to the demonstration of in-fibre semiconductor devices 15,17,23,30 . Here we characterize the electric performance of the Si core fabricated by the fibre-draw synthesis method.…”
Section: Resultsmentioning
confidence: 99%
“…In recent years the opportunities for tighter integration between electronics and photonics have led to the emergence of the field of Si photonics where wafer processes are used to combine the best features of both materials [11][12][13][14] . In a mirror effort the advanced demonstrations of incorporating Si into fibres have been explored in electronics and photonics, such as photodetection 15 , fibre battery 16 , fibre solar cell 17,18 , electro-optical modulation 19 , material engineering 20 , non-linear optics 21,22 , pressurized Si sphere fabrication 23 and so on. Two disparate methods of producing Si-core silica-cladded fibres have been reported, the first relies on the physical flow process and the second on a chemical reaction internal to a pre-fabricated fibre.…”
mentioning
confidence: 99%
“…An advantage of this approach is that it should be possible to deposit nearly all of the materials that are deposited in conventional chemical vapor deposition reactors within optical fibers. Thus far we have deposited well-developed fiber cores of both group IV [1,2,5] and compound semiconductors [3] . In general, high pressure precursors are configure to flow down the pores of an MOF (Figure 1).…”
Section: Semiconductor Fiber Fabricationmentioning
confidence: 99%
“…Our group has been pursing a different, potentially complementary vision of all-fiber optoelectronics in which light can be generated, modulated, and detected within the fiber itself [1][2][3][4][5] . Fiber devices are in general valued for their robustness, simplicity, and ability to integrate seamlessly with existing fiber infrastructure.…”
Section: Introductionmentioning
confidence: 99%
“…The literature on Group IV semiconductor-core glass fibers is now significant [1][2][3][4][5], including processing improvements [6][7][8] and device demonstrations [9][10][11][12][13][14][15][16][17]. There are also reports on both SiGe alloy and II-VI core fibers [18][19][20][21][22][23], one including low temperature photoluminescence [21].…”
Section: Introductionmentioning
confidence: 99%