Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors

Dou, Yi; Liang, Yujun; Li, Haoran; Xue, Yuncan; Ye, Hanlin; Han, Ya-jie

doi:10.1039/d2cc02773a

Cited by 3 publications

(1 citation statement)

References 33 publications

(37 reference statements)

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“…Zhang and Song [142] reported that by solution depositing a highly p-type CuZnS layer on GaN, a fast response speed of 0.14/40 ms and an ultrahigh photo/dark current ratio reaching 3 × 10 8 were obtained under 350 nm light illumination at zero bias. Dou et al [143] reported that by integrating the H 2 V 3 O 8 nanowires onto the GaN film via the dipcoating method, an n-n heterojunction self-powered UV-PD was realized. Furthermore, n-SnO 2 microwires were deposited on a p-GaN epitaxial layer, and a monolithically integrated UV light-emitting-diode (LED) with a PD was obtained [144].…”

Section: P-n Heterojunctions With Other Materials Systemsmentioning

confidence: 99%

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

Zhang,

Deng,

Xia

et al. 2024

Semicond. Sci. Technol.

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Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

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Section: P-n Heterojunctions With Other Materials Systemsmentioning

confidence: 99%

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

Zhang,

Deng,

Xia

et al. 2024

Semicond. Sci. Technol.

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Limitations of the Tauc Plot Method

Klein,

Kampermann,

Mockenhaupt

et al. 2023

Adv Funct Materials

128

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The Tauc plot is a method originally developed to derive the optical gap of amorphous semiconductors such as amorphous germanium or silicon. By measuring the absorption coefficient α(hν) and plotting versus photon energy hν, a value for the optical gap (Tauc gap) is determined. In this way non‐direct optical transitions between approximately parabolic bands can be examined. In the last decades, a modification of this method for (poly‐) crystalline semiconductors has become popular to study direct and indirect interband transitions. For this purpose, (ahν)n (n = , 2) is plotted against hν to determine a value of the electronic bandgap. Due to the ease of performing UV–vis measurements, this method has nowadays become a standard to analyze various (poly‐) crystalline solids, regardless of their different electronic structure. Although this leads partially to widely varying values of the respective bandgap of nominally identical materials, there is still no study that critically questions which peculiarities in the electronic structure prevent a use of the Tauc plot for (poly‐) crystalline solids and to which material classes this applies. This study aims to close this gap by discussing the Tauc plot and its limiting factors for exemplary (poly‐) crystalline solids with different electronic structures.

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The tribovoltaic effect

Lin

Wang

2023

Materials Today

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Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Abstract: A self-powered ultraviolet (UV) photodetector was successfully constructed through combining H2V3O8 nanowires (NWs) and a GaN thin film.

Cited by 3 publications

References 33 publications

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

Limitations of the Tauc Plot Method

The tribovoltaic effect

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