“…A portable and versatile DEA sensor, particularly one capable of detection at room temperature (RT), will be in high demand. In recent years, a variety of sensors have been established and introduced into the market. , Among them, chemiresistive gas sensors based on metal oxide semiconductor (MOS) resistance can change rapidly upon contact with guest molecules followed by gas adsorption and catalytic reaction with various MOS materials, such as ZnO, MoO 3 , CuO, NiO, In 2 O 3 , WO 3 , and Fe 2 O 3 with better selectivity, fast response, LOD, high efficiency, high sensitivity, and low consumption, play a significant role in household, laboratory, and industrial gas detection equipment. , Furthermore, the p-type MOS material can generate a hole accumulation layer that effectively adsorbs oxygen molecules, exhibiting excellent catalytic effects and being less affected by high temperatures and humidity. , Recently, CuO, a p-type semiconductor, has been regarded as the most promising material for sensing. It can absorb a significant number of oxygen molecules due to cation/anion vacancies, a narrow bandgap (1.24 eV), outstanding thermal conductivity, nontoxicity, redox-rich and catalytic performance, low cost, high electron mobility, and the capacity to detect gases at RT. − Moreover, numerous techniques have been used to incorporate cation/anion vacancies into metal oxide materials .…”