Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

Abstract

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

“…However, the resistive effects in solid electrolytes based ReRAMs are usually based on electroforming or chemical process, which is a destructive process as it involves chemical reaction that could lead to thermal damage of the devices11. On the other hand, ferroelectric materials have attracted enormous attention due to their remnant polarization and polarization inversion81112. No electroforming or chemical process takes place during the operation of ferroelectric ReRAM, thus enabling longer lifetime and faster operation.…”

“…No electroforming or chemical process takes place during the operation of ferroelectric ReRAM, thus enabling longer lifetime and faster operation. The data is stored, written or read by switching or inverting the polarization81112. Polarization represents the net dipole moment in the ferroelectric and the switching phenomenon is generally discussed in terms of domains which represent the local distribution of dipoles with alignment along the applied field direction1213.…”

“…The data is stored, written or read by switching or inverting the polarization81112. Polarization represents the net dipole moment in the ferroelectric and the switching phenomenon is generally discussed in terms of domains which represent the local distribution of dipoles with alignment along the applied field direction1213. A good ferroelectric material can be easily poled by applying electric field above the coercive field1214.…”

Light assisted irreversible resistive switching in ultra thin hafnium oxide

“…20 Other binary and ternary oxides have also shown an extra degree of freedom in resistive states under controlled illumination of light, which may be a signi-cant development in the eld of information and NVRAM technology. [21][22][23] On the other hand, devices directly integrated on Si is highly sensitive to the illumination of moderate light intensity which partially or permanently changes the band offset alignment and creates photon assisted trap levels near the different interface. To understand the basic physics, band alignment behavior, reproducibility, and device life time, it is due to have methodical investigation on the functional properties of HfO 2 -SiO 2 /Si heterostructures under different light ambient condition.…”

Simulation of thermal crosstalk of resistive switching memory in three-dimensional crossbar structure

“…To satisfy the increasing requirements for enormous data densities and nonvolatile storage, some new memory technologies are of growing interest due to their significant potential for the replacing or complementing existing memory technology (such as FLASH memory) [5][6][7]. High density 3-dimensional (3D) RRAM crossbar array is one of the major focuses for the new age technology [8][9][10].…”