Integration of Melting Excimer Laser Annealing in Power MOS Technology

Magna, Antonino La; Spinella, C.; Fortunato, G.; Mariucci, L.; Cuscunà, Massimo; Camalleri, C. M.; Magrì, A.; Rosa, G. La; Svensson, B. G.; Monakhov, Edouard; Simon, Frank

doi:10.1109/ted.2007.892011

Cited by 14 publications

(8 citation statements)

References 17 publications

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“…In PMOS frontside [11] and backside [12] applications, XeCl radiation at 308 nm has been tested and has found its way into industrial production where the benefits of this technique balance well with the requirements of ever decreasing production costs.…”

Section: Novel Ela Applications Most Recently Elamentioning

confidence: 99%

Lasers solutions for wafer and thin‐film annealing

Paetzel¹,

Turk

Brune

et al. 2008

Phys. Status Solidi (c)

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The application of lasers for the annealing of wafer‐based and thin‐film microelectronic devices is steadily increasing. Excellent control of material characteristics (for example, dopant activation profile) can be achieved through proper selection of laser parameters, such as wavelength, pulse duration and fluence. In this paper, we present recent results achieved with our industrial lasers and tailored optical systems used for annealing and activation. Such systems include Excimer Lasers, q‐switched DPSS Lasers and our unique high‐power CW laser system that delivers scalable output power of multiple hundreds of Watts in the visible wavelength range. One focus is the formation of ultra‐shallow Source/Drain junctions for CMOS nodes below 90 nm. We will present results from Excimer Laser Annealing (ELA) that show high dopant activation, exact control over the junction depth and efficient implant damage removal. Another application is power MOSFET, where a laser source is utilized for dopant activation and damage healing over micron depths. The choice of wavelength (i.e. green) with adequate interaction time leads to an optimized activation profile. The use of single laser pulses, pulse trains or continuous irradiation leads to the preferred annealing result. Crystallization of thin films is another large domain for laser annealing equipment. We will present selected results from silicon thin‐film annealing, which is commonly used in the Flat Panel Display industry. The applicability of these technologies beyond displays into electronics and photo‐voltaic applications is also shown. In addition, descriptions are provided of experimental results and simulations of laser sources and optical systems that enable variation of the temperature profile within the irradiated materials and offer the scalability and maturity as demanded by the semiconductor industry. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Novel Ela Applications Most Recently Elamentioning

confidence: 99%

Lasers solutions for wafer and thin‐film annealing

Paetzel¹,

Turk

Brune

et al. 2008

Phys. Status Solidi (c)

Self Cite

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“…In Fig. 8 Threshold voltage was found to be greater ͑50-150 mV͒ than those in standard devices, presumably due to the shorter source layer lateral depth, which determines a greater peak body channel concentration, and consequently a larger threshold value. A particularly limited extension of the melting in the polysilicon gate is foreseen by the simulation in these conditions.…”

mentioning

confidence: 86%

“…8 In particular, the power MOS device consists of multi-MOS basic cells interconnected in parallel on a single die. 8 In particular, the power MOS device consists of multi-MOS basic cells interconnected in parallel on a single die.…”

mentioning

confidence: 99%

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

Fortunato

Mariucci

Cuscunà

et al. 2006

Applied Physics Letters

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Articles you may be interested inFabrication and characterization of In Ga As P ∕ In P double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching An advanced gate stack structure, which incorporates a Bragg reflector, has been developed for the integration of excimer laser annealing into the power metal-oxide semiconductor ͑MOS͒ transistor fabrication process. This advanced gate structure effectively protects the gate stack from melting, thus solving the problem related to protrusion formation. By using this gate stack configuration, power MOS transistors were fabricated with improved electrical characteristics. The Bragg reflector based gate stack architecture can be applied to other device structures, such as scaled MOS transistors, thus extending the possibilities of process integration of excimer laser annealing.

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“…For the SOG IC-processing technology, the individual processing modules, including the STT and the laser annealing [56], have all been production-proven to some extent. The main concerns are connected to the stress relief experienced after gluing and silicon removal.…”

Section: B Technologies For Two-sided Contactingmentioning

confidence: 99%

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

Nanver

Schellevis

Scholtes

et al. 2009

IEEE J. Solid-State Circuits

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Abstract-This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special 2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).

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Integration of Melting Excimer Laser Annealing in Power MOS Technology

Cited by 14 publications

References 17 publications

Lasers solutions for wafer and thin‐film annealing

Lasers solutions for wafer and thin‐film annealing

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

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