Integration of Memristive Devices into a 130 nm CMOS Baseline Technology

Abstract

The two main features of the memristive devices which makes them the promising candidates for neuromorphic applications are low power consumption and CMOS compatibility. The monolithic integration of memristive devices with CMOS circuitry paves the way for in-memory computing. This chapter focuses on the factors governing the CMOS integration process. Firstly, the influence of CMOS baseline technology selection on the memristor module is briefly discussed. Secondly, the selection of metal level interconnects and their effect on the memristive device performance is explained. Further, the widely used deposition technique for the CMOS compatible memristive switching layers is presented. Finally, the implementation of the optimized process for the fabrication of the memristive module and its influence on the device performance is presented in terms of electrical characterization results.