Integration of sol-gel derived PZT with sos technology

Abstract

PZT thin films up to 300oA have been grown via a sol-gel route onto metallized sapphire substrates. Sharp X-ray peaks of perovskite indicating mixed or highly (1 11) oriented PZT were obtained and a link made to the thermal processing applied. Ferroelectric properties of these samples are discussed in light of development of a 4 kbit NVRAM demonstrator on SOS, which is also introduced. The relative merits of these properties along with endurance measurements are discussed with particular emphasis on the implications for complete integration with conventional SOS -based technology, in the context of non-volatile memory applications.

Study of structural and dielectric properties of Nickel-doped BaTiO3 material

“…These materials are of great interest because of the existence of a large number of ferroelectric phases. Moreover, these materials are likely to be applied in many uses such as microelectronics, FeRAM memories, microactuators or displacement sensors because of their effective dielectric properties [1][2][3][4] . The most studied perovskite-type materials are BaTiO 3 , SrTiO 3 , PbTiO 3 , PbZr x Ti 1-x O 3 (PZT) which have given rise to numerous studies concerning their properties, in particular, their ferroelectric character [5][6][7] .…”