Intelligent RF power module using automatic bias control (ABC) system for PCS CDMA applications

Sato, Taichiro; Yuyama, S.; Nakajima, Akira; Ono, Hirotaka; Iwai, A.; Hase, E.; Kusano, C.

doi:10.1109/mwsym.1998.689356

Cited by 6 publications

(2 citation statements)

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“…In order to realize power amplifiers having both characteristics, several schemes have been proposed such as bias controls by external circuits [1]- [4], switched circuit configurations [5]- [7] and combined configuration of class AB and class C amplifiers [8]. However, it is difficult for driver amplifiers to adopt those proposed schemes because of their limited circuit scale and size.…”

Section: Introductionmentioning

confidence: 99%

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Shinjo

Mori

Joba

et al. 2001

2001 31st European Microwave Conference

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An L-band low quiescent current and low distortion SiGe HBT driver amplifier having a self base bias control circuit is described. Since the size of this circuit is small and it does not need external control circuit, it is easy to integrate with the driver amplifier on single chip. According to the output power level, the self base bias control circuit, which is the combination of a P-MOSFET current mirror and a conventional constant base voltage circuit, automatically controls the base voltage and allows low quiescent current at low output power level and low distortion at high output power level. The simulated result shows that the proposed driver amplifier realized P1dB improvement of3.0dB compared with the conventional constant base voltage driver amplifier under the same quiescent current condition. The fabricated amplifier achieved P1dB of 14.9dBm with quiescent current of 15.3mA.

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Section: Introductionmentioning

confidence: 99%

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Shinjo

Mori

Joba

et al. 2001

2001 31st European Microwave Conference

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“…However, many previous works are just focused on the efficiency improvement in high power condition by using simple design [2]. Recently, an automatic bias control (ABC) PA was proposed to reduce the current consumption at low power level [3]. Others suggested to use a switch approach to solve the same problem [4].…”

Section: Introductionmentioning

confidence: 99%

A low quiescent current, 40% efficiency three-stage PHEMT power amplifier MMIC for PCS CDMA application

Wang¹,

Cao

Liang³

et al.

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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This paper reports a three-stage PHEMT power amplifier (PA) MMIC with low quiescent current and high power added efficiency (PAE) for 1.9GHz PCS CDMA application. Based on an accurate extracted large signal PHEMT model, the effects of harmonic terminations as well as envelope termination to power, linearity and PAE have been investigated and the results have been applied to the PA design. The threestage PCS CDMA PA attained over 40% PAE, 0.8-watt output power and 30dB gain at -45dBc adjacent channel power rejection (ACPR) under a supply voltage of 3.6 V. The total quiescent current is only 8OmA. '

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A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

Yamamoto

Suzuki

Mori

et al. 2000

IEEE J. Solid-State Circuits

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Intelligent RF power module using automatic bias control (ABC) system for PCS CDMA applications

Cited by 6 publications

References 0 publications

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

A low quiescent current, 40% efficiency three-stage PHEMT power amplifier MMIC for PCS CDMA application

A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique

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