Intense laser field effect on the interband absorption in differently shaped near-surface quantum wells

Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well

“…At zero field, the overlap integral is always an increasing function of the ILFparameter because -for instance, for a 0 > L/2-the carrier localization is favored in the case of two coupled QWs. The blueshift observed in our work is in agreement with an analogous behavior in the energy of the resonant peak for interband absorption in square and semiparabolic nearsurface QWs under intense laser field reported by Niculescu and Eseanu [34,35].…”

“…(8), (9), and (11) and the nonperturbative theory developed to describe the atomic behavior in intense high frequency laser field can be found in Refs. [20,[31][32][33][34][35].…”

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

“…A detailed discussion on the derivation of 〈 V 〉( z i α 0 i ) is provided in other studies [28,33-37]. …”

“…In Equation 7, I and ω are, respectively, the average intensity and the frequency of the laser, c is the velocity of the light, and A 0 is the amplitude of the vector potential associated with the incident radiation. A detailed discussion on the derivation of 〈 V 〉( z i α 0 i ) is provided in other studies [ 28 , 33 - 37 ].…”

Intersubband and Interband Absorptions in Near-Surface Quantum Wells Under Intense Laser Field

“…For narrower n-sQWs with w L = 50 Å or 80 Å the main laser-induced properties of the CB are very similar (Eseanu, 2011;Niculescu & Eseanu, 2011). In contrast, the laser parameter augmentation has little effect on the heavy-hole potential (not plotted here) because 0   1/ * m (see Eq.…”