Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hasegawa, Hideki; Tanaka, Satoru; Ramvall, Peter; Aoyagi, Yoshinobu

doi:10.1063/1.121168

Cited by 131 publications

(71 citation statements)

References 14 publications

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“…As a possible origin, Ruminov et al suggested that Si mostly affects the dislocation structure during the GaN growth, perhaps by changing the atom mobility and the number of growth islands at the initial stage of the growth, and/or changing the dislocation mobility. Aoyagi and co-workers [23][24][25] have used the influence of silicon on the growth of GaN, InGaN, and AlGaN to grow quantum dots. In these studies it has been demostrated that silicon acts as a surfactant at the initial stages of growth, inducing a three-dimensional Stranski-Krastanow growth mode.…”

Section: Discussionmentioning

confidence: 99%

Structural and optical properties of Si-doped GaN

et al. 2000

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Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction ͑XRD͒, atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress induced near band gap luminescence shift is estimated to 19Ϯ2 meV/GPa. An increasing concentration of dopant impurities in the films leads to asymmetries of the XRD and photoluminescence spectra, which are probably related to a stress induced inhomogeneous distribution of dopants. Atomic force microscopy observations of surface modulation with increasing silicon doping support this latter statement. Transmission and photothermal deflection spectroscopy measurements are used to determine the band gap energy and Urbach energy of highly doped samples.

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Section: Discussionmentioning

confidence: 99%

Structural and optical properties of Si-doped GaN

et al. 2000

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“…The aspect ratio (height/diameter) of the In-rich InGaN QDs was below 0.1, which is similar to that of InN QDs, 25) and it is much lower than that SELECTED TOPICS in APPLIED PHYSICS III of Ga-rich InGaN QDs. [26][27][28] We suppose that In-rich InGaN QDs have lower aspect ratios because of the rapid decomposition of In-rich InGaN at the apex regions of QDs as we observed in our In-rich InGaN/GaN QW structures. 10,12) The In-rich InGaN/GaN QDs were capped with GaN at 650 C to enable investigation of their optical properties.…”

Section: Resultsmentioning

confidence: 78%

Strong Room-Temperature Near-Ultraviolet Emission from In-Rich InGaN/GaN Nanostructures Grown by Metalorganic Chemical Vapor Deposition

Kwon¹,

Kim²,

Kim³

et al. 2005

Jpn. J. Appl. Phys.

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We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (MQWs) and quantum dots (QDs) by metalorganic chemical vapor deposition (MOCVD). Introduction of a relatively high growth temperature (730 C) made it possible to grow In-rich InGaN/GaN QWs, and growth interruption (GI) was effectively used to improve the structural and optical properties of the QWs. To enhance thermal characteristics, an artificial formation of In-rich InGaN/GaN QDs was made at a relatively lower growth temperature (650 C) than that of QWs. The well width of the In-rich InGaN/GaN QWs and the dot height of the In-rich InGaN/GaN QDs were both approximately 1 nm, and we obtained strong roomtemperature near-ultraviolet (UV) emission from these In-rich InGaN/GaN nanostructures. This strongly suggests that ultrathin In-rich InGaN nanostructures can be a new candidate for a near-UV source, which might replace the conventional low-indium-content (<10%), thicker InGaN QW.

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“…Here, a key question is how to form the AlGaN/GaN-based nanostructures in a size-and position-controlled manner. Recent studies on the fabrication of GaN-based quantum structures have been mostly focused on the self-assembled formation of quantum dots (QDs) using the Stranski-Krastanov mode [1,2] or anti-surfactant methods [3,4]. In these methods, control of size and position seems to be very difficult.…”

Section: Introductionmentioning

confidence: 99%

Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

Sato

Oikawa

Hasegawa

2005

Jpn. J. Appl. Phys.

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The feasibility of the selective molecular beam epitaxy (MBE) growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates is investigated. The detailed studies on growth features have revealed that size-reducing selective growth is possible on mesa patterns having the <11-20>-orientation, but not on those having the <1-100>-orientations. The behavior reflects complex growth kinetics on high-index crystalline facets. The lateral wire width of QWR structures formed selectively on a top mesa can be controlled by adjusting the growth thickness and the initial size of mesa patterns. From cathodoluminescence (CL) measurements, emission from the embedded AlGaN/GaN QWR structure has been clearly identified. KEYWORDS: selective growth, molecular beam epitaxy (MBE), patterned substrates, GaN, AlGaN IntroductionRecently, the AlGaN/GaN system has been opened up and has led to the establishment of blue/UV photonic and high-power electronic device application areas. This material system, however, is potentially suitable for not only these areas but also for high-operating-temperature quantum devices such as quantum-wire transistors (QWR-Trs) and single-electron transistors (SETs). This is due to wide energy gaps with a large E c and to the availability of high-density two dimensional electron gases (2DEGs) even under non-doped conditions which avoids the doping fluctuation problem commonly observed in nanometer-scale devices. Here, a key question is how to form the AlGaN/GaN-based nanostructures in a size-and position-controlled manner. Recent studies on the fabrication of GaN-based quantum structures have been mostly focused on the self-assembled formation of quantum dots (QDs) using the Stranski-Krastanov mode [1,2] or anti-surfactant methods [3,4]. In these methods, control of size and position seems to be very difficult. On the other hand, we have shown that selective molecular beam epitaxy (MBE) growth on a prepatterned substrate is a very powerful approach for the formation of high-density quantum nanostructures for with tight control of both position and size.The purpose of this study is to investigate the basic behavior and feasibility of the selective MBE growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates for the first time. For this purpose, GaN and AlGaN layers were grown by rf-radical-assisted MBE growth. Through growth on planar GaN (0001) substrates, the basic growth conditions were optimized using in situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) analyses. Then, selective growth experiments were

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Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Cited by 131 publications

References 14 publications

Structural and optical properties of Si-doped GaN

Structural and optical properties of Si-doped GaN

Strong Room-Temperature Near-Ultraviolet Emission from In-Rich InGaN/GaN Nanostructures Grown by Metalorganic Chemical Vapor Deposition

Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

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