Intense pulsed light (IPL) annealed sol–gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs)

Kathirgamanathan, Poopathy; Kumaraverl, Muttulingam; Vanga, Raghava Reddy; Ravichandran, Seenivasagam

doi:10.1039/c8ra08136k

Cited by 5 publications

(6 citation statements)

References 42 publications

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“…The ligands on the QD surfaces might be burned off or left over on the perovskite surface to form a protective layer . Thus, after IPL sintering, the perovskite is expected to have a higher carrier migration rate and better photoelectric performance . Like MAPbBr 3 QD, spin-coated MAPbI 3 films also show noticeable grain size increasing after IPL treatment.…”

Section: Resultsmentioning

confidence: 99%

“…15 Thus, after IPL sintering, the perovskite is expected to have a higher carrier migration rate and better photoelectric performance. 30 where ρ is the density, C p is the heat capacity, l is the thickness, and ΔT is the temperature rise of the perovskite film. With a volumetric heat capacity (ρC p = 1.28 J cm −3 K −1 ) and ΔT = 250 °C, 32 the energy absorbed by the MAPbI 3 film, which has a thickness of 300 nm, is only ∼0.01 J/cm 2 , much less than the overall energy provided by IPL (3.92 J/cm 2 ).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Recrystallized Perovskite Thin Film via Intense Pulse Light Sintering for Vertical Gradient Band Gap Perovskite Solar Cells

Peng

Chen

et al. 2021

ACS Appl. Energy Mater.

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A wet preparation process was developed to prepare vertical gradient perovskite film (MAPbBr3/MAPbBr3–x I x /MAPbI3) for solar cells. To avoid mutual dissolution, an MAPbBr3 quantum dot (QD) ink was directly inkjet printed on a spin-coated MAPbI3 film to create stacked perovskite layers (MAPbBr3 QD/MAPbI3). Intense pulse light (IPL) was used to sinter the stacked perovskite films. After the IPL sintering process, the grain size in the stacked layers significantly increased from 16 to 30 nm (MAPbBr3 QD) and from 123 to 538 nm (MAPbI3), respectively. Meanwhile, between the stacked layers, a mixed halide perovskite (MAPbBr3– x I x ) film with a gradient was created. The IPL-sintered perovskite films remained stable without phase separation under 15 W/cm2 illimitation for 20 s. The gradient perovskite films were further assembled as an absorber layer in solar cell and exhibited a power conversion efficiency (PCE) of 17.06%. Moreover, the solar cell with vertical gradient showed good moisture stability and exhibited 80% PCE under relative humidity (RH) = 70% for 500 h. In summary, this process can create an interfacial gradient layer between light-absorbing materials and can be further applied to other material systems.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Recrystallized Perovskite Thin Film via Intense Pulse Light Sintering for Vertical Gradient Band Gap Perovskite Solar Cells

Peng

Chen

et al. 2021

ACS Appl. Energy Mater.

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“…The metal oxide was used as an electron injection layer (EIL) or an electron transport layer (ETL) rather than an active layer. In this case, IPL annealing can control the valence-conduction band level of EIL or ETL [67,68]. Quantum dot LED (QLED) was manufactured using ZnO as an EIL and the performance of ZnO by IPL annealing was compared (figure 4(a)) [67].…”

Section: Solution Processed Thin Filmsmentioning

confidence: 99%

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Noh¹,

Kim²,

Lee³

et al. 2022

Nanotechnology

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The intense pulsed light (IPL) post-treatment process has attracted great attention in the device fabrication due to its versatility and rapidity particularly for solution process functional structures in devices, flexible/printed electronics, and continuous manufacturing process. The metal oxide materials inherently have multi-functionality and have been widely used in form of thin films or nanostructures in device application such as thin-film transistors, light-emitting diodes, solar cells, supercapacitors, etc. The IPL treatment enhances the physical and/or chemical properties of the functional metal oxide through photothermal effects. However, most metal oxides are transparent to most range of visible light and require more energy for post-treatment. In this review, we have summarized the IPL post-treatment processes for metal oxide thin films and nanostructures in device applications. The sintering and annealing of metal oxides using IPL improved the device performances by employing additional light absorbing layer or back-reflector. The IPL process becomes an innovative versatile post-treatment process in conjunction with multi-functional metal oxides in near-future device applications.

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“…For traditional, rigid substrates, a high-temperature annealing step is often required to reduce the presence of insulating elements such as residual adsorbed solvents and polymers/other non-functional components. , In contrast, flexible substrates and stretchable platforms are not readily compatible with such thermal processing, as the structural stability of these substrate materials is compromised due to decomposition and increased stiffening at relatively high temperatures. This thermal limitation requires the application of high but concentrated energy alternatives such as focused laser annealing and rapid photonic annealing to reduce the electrical resistivity. ,, Therefore, alternative low-energy processing approaches are crucial for enhancing the conductive transport in graphene films on flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

“…This thermal limitation requires the application of high but concentrated energy alternatives such as focused laser annealing and rapid photonic annealing to reduce the electrical resistivity. 11,16,17 processing approaches are crucial for enhancing the conductive transport in graphene films on flexible substrates. A common substrate for stretchable and wearable devices is polydimethylsiloxane (PDMS).…”

Section: ■ Introductionmentioning

confidence: 99%

Graphene Flake Self-Assembly Enhancement via Stretchable Platforms and External Mechanical Stimuli

et al. 2021

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While the green production and application of 2D functional nanomaterials, such as graphene flakes, in films for stretchable and wearable technologies is a promising platform for advanced technologies, there are still challenges involved in the processing of the deposited material to improve properties such as electrical conductivity. In applications such as wearable biomedical and flexible energy devices, the widely used flexible and stretchable substrate materials are incompatible with high-temperature processing traditionally employed to improve the electrical properties, which necessitates alternative manufacturing approaches and new steps for enhancing the film functionality. We hypothesize that a mechanical stimulus, in the form of substrate straining, may provide such a low-energy approach for modifying deposited film properties through increased flake packing and reorientation. To this end, graphene flakes were exfoliated using an unexplored combination of ethanol and cellulose acetate butyrate for morphological and percolative electrical characterization prior to application on polydimethylsiloxane (PDMS) substrates as a flexible and stretchable electrically conductive platform. The deposited percolative free-standing films on PDMS were characterized via in situ resistance strain monitoring and surface morphology measurements over numerous strain cycles, with parameters extracted describing the dynamic modulation of the film’s electrical properties. A reduction in the film resistance and strain gauge factor was found to correlate with the surface roughness and densification of a sample’s (sub)surface and the applied strain. High surface roughness samples exhibited enhanced reduction in resistance as well as increased sensitivity to strain compared to samples with low surface roughness, corresponding to surface smoothing, which is related to the dynamic settling of graphene flakes on the substrate surface. This procedure of incorporating strain as a mechanical stimulus may find application as a manufacturing tool/step for the routine fabrication of stretchable and wearable devices, as a low energy and compatible approach, for enhancing the properties of such devices for either high sensitivity or low sensitivity of electrical resistance to substrate strain.

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Intense pulsed light (IPL) annealed sol–gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs)

Abstract: Room temperature intense pulsed light annealing (photonic annealing, pulsed forge) renders the sol–gel derived ZnO films highly conductive and hydrophobic with improved interface with the colloidal quantum dots.

Cited by 5 publications

References 42 publications

Recrystallized Perovskite Thin Film via Intense Pulse Light Sintering for Vertical Gradient Band Gap Perovskite Solar Cells

Recrystallized Perovskite Thin Film via Intense Pulse Light Sintering for Vertical Gradient Band Gap Perovskite Solar Cells

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Graphene Flake Self-Assembly Enhancement via Stretchable Platforms and External Mechanical Stimuli

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