Intense terahertz pulses by four-wave rectification in air

Cook, D. J.; Hochstrasser, Robin M.

doi:10.1364/ol.25.001210

Cited by 993 publications

(644 citation statements)

References 9 publications

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“…Plasmas have also been shown to generate intense THz radiation, with energies exceeding >5 J per pulse . In these experiments a focused fundamental pulse at 800 nm is mixed with its second harmonic at 400 nm in a gas (Cook and Hochstrasser, 2000). The fundamental beam ionizes the gas in its focus, which then acts as the nonlinear medium.…”

Section: Generation Of Thz Radiation Based On Nonlinear Optical Procementioning

confidence: 99%

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

et al. 2011

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Time-resolved, pulsed terahertz spectroscopy has developed into a powerful tool to study charge carrier dynamics in semiconductors and semiconductor structures over the past decades. Covering the energy range from a few to about 100 meV, terahertz radiation is sensitive to the response of charge quasiparticles, e.g., free carriers, polarons, and excitons. The distinct spectral signatures of these different quasiparticles in the THz range allow their discrimination and characterization using pulsed THz radiation. This frequency region is also well suited for the study of phonon resonances and intraband transitions in low-dimensional systems. Moreover, using a pump-probe scheme, it is possible to monitor the nonequilibrium time evolution of carriers and low-energy excitations with sub-ps time resolution. Being an all-optical technique, terahertz time-domain spectroscopy is contact-free and noninvasive and hence suited to probe the conductivity of, particularly, nanostructured materials that are difficult or impossible to access with other methods. The latest developments in the application of terahertz time-domain spectroscopy to bulk and nanostructured semiconductors are reviewed.

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Section: Generation Of Thz Radiation Based On Nonlinear Optical Procementioning

confidence: 99%

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

et al. 2011

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“…It is based on a THz pulsed source and an electro-optical sampling device for the detection. The THz pulses are produced through plasma generation in gases with two-color femtosecond pulses [58,63,64,65,66]. A fraction of the output of a chirped pulse amplifier (CPA, 800 nm wavelength, 100 fs pulse duration, 7.5 mJ energy, 100 Hz repetition rate) is focused in dry nitrogen.…”

Section: Experimental Setup For Producing Molecular Orientationmentioning

confidence: 99%

Observation of the field-free orientation of a symmetric-top molecule by terahertz laser pulses at high temperature

et al. 2016

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We investigate experimentally and numerically the field-free orientation of the symmetric top molecule of methyl-iodide at high temperature using a terahertz radiation generated by a plasma induced by a two-color laser beam. The degree of orientation is measured from the free-induction decay emitted by the sample. The observed experimental signal is reproduced with a good accuracy by numerical simulations.

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“…For example, this allows integration of THz optoelectronics with high-speed telecommunications as the 1.3-1.5 mm range is not ideal for the above inorganic crystals. Some other nonlinear media have also been explored, although they mostly suffer from either poor stability or limited bandwidth, for example, bulky ambient air-plasma generation normally with large shot-by-shot fluctuations 25,26 , and electrically-biased photoconductive antennas that not only require extra voltage driving sources but also have limited bandwidth 27 ; some substrate materials such as GaAs still have strong TO and LO phonon resonances at 8.1 and 8.8 THz, which limits the THz radiation in this range 28 . The same narrow THz emission bandwidth has also been seen from femtosecond-laser-accelerated photoelectrons in nano-plasmonic structures 29,30 .…”

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confidence: 99%

Broadband terahertz generation from metamaterials

et al. 2014

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The terahertz spectral regime, ranging from about 0.1-15 THz, is one of the least explored yet most technologically transformative spectral regions. One current challenge is to develop efficient and compact terahertz emitters/detectors with a broadband and gapless spectrum that can be tailored for various pump photon energies. Here we demonstrate efficient single-cycle broadband THz generation, ranging from about 0.1-4 THz, from a thin layer of split-ring resonators with few tens of nanometers thickness by pumping at the telecommunications wavelength of 1.5 mm (200 THz). The terahertz emission arises from exciting the magnetic-dipole resonance of the split-ring resonators and quickly decreases under off-resonance pumping. This, together with pump polarization dependence and power scaling of the terahertz emission, identifies the role of optically induced nonlinear currents in split-ring resonators. We also reveal a giant sheet nonlinear susceptibility B10 À 16 m 2 V À 1 that far exceeds thin films and bulk non-centrosymmetric materials.

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Intense terahertz pulses by four-wave rectification in air

Cited by 993 publications

References 9 publications

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

Observation of the field-free orientation of a symmetric-top molecule by terahertz laser pulses at high temperature

Broadband terahertz generation from metamaterials

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