Intensification of iron–boron complex association in silicon solar cells under acoustic wave action

Olikh, O. Ya.; Kostylyov, V. P.; Vlasiuk, Victor; Korkishko, R.M.; Chupryna, Roman

doi:10.1007/s10854-022-08252-3

J Mater Sci: Mater Electron

2022

DOI: 10.1007/s10854-022-08252-3

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Intensification of iron–boron complex association in silicon solar cells under acoustic wave action

O. Ya. Olikh

V. P. Kostylyov

Victor Vlasiuk

et al.

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2024

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Cited by 2 publications

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Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon

Olikh,

Datsenko,

Kondratenko

2024

Physica Status Solidi (a)

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Photodissociation kinetics of iron–boron (FeB) pairs in boron‐doped Czochralski silicon is studied experimentally using different light sources. It is shown that the FeB dissociation rate depends not only on integrated light intensity and overall carrier generation rate, but also on spectral composition of illumination. The value of the material constant of dissociation K varies and has been determined to be within s. The investigation reveals an increase in the dissociation rate with increase in photon energy. The results indicate that recombination‐enhanced defect reaction is the primary factor in the second stage of pair dissociation.

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Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon

Olikh,

Datsenko,

Kondratenko

2024

Physica Status Solidi (a)

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Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms

Chibane,

Kouhlane,

Bouhafs

et al. 2024

Appl. Phys. A

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Intensification of iron–boron complex association in silicon solar cells under acoustic wave action

Cited by 2 publications

References 55 publications

Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon

Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon

Light-triggered defect dynamics in silicon wafers: understanding degradation mechanisms

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