“…According to the phonon theory 38 , 39 , the line position is affected by the crystal strain inhomogeneity, direct one-phonon processes, multiphonon processes, and Raman phonon scattering processes. As was found in earlier studies 36 , 40 , thermal shift is mainly governed by electron–host interaction effect associated with Raman scattering, and therefore the simplified theoretical expressions for the line shift can be written in the following form 41 : where υ 0 , α, Θ D represent the initial line position (determined at low temperature, in this paper at 123 K), the electron–host coupling parameter, and the effective Debye temperature, respectively. We monitored position of the most intensive emission band of YVO 4 :Nd 3+ 2.4 at % NPs, which is attributed to the transition between the Stark levels of the 4 F 3/2 and 4 I 11/2 states (Fig.…”