An efficient and frequency-dependent model 1 describing the crosstalk noise on power distribution networks 2 due to inductive links in contactless 3-D ICs is presented. A two-3 step approach is followed to model the crosstalk effect. During the 4 first step, the mutual inductance between the power distribution 5 network and the inductive link is analytically determined. Due 6 to the weak dependence of mutual inductance to frequency, 7 a magnetostatic model is proposed for this step. The model 8 includes the physical and electrical characteristics of both the 9 on-chip inductor and the wires of the power distribution network. 10 In this way, different power network topologies can be modeled 11 facilitating noise analysis in the vicinity of the on-chip inductor. 12 This approach is justified by the typical use of regular power 13 network topologies in modern integrated circuits. In the second 14 stage, the noise is assessed with SPICE simulations, considering 15 the mutual inductance between the two structures from the 16 first step and the resistance variations due to high frequency 17 effects. Thus, an efficient, scalable, and accurate method for 18 the analysis of the crosstalk effects due to inductive links is 19 provided, without resorting on computationally expensive and 20 time consuming full-wave simulations. Compared with the full-21 wave simulations, the induced noise is evaluated four orders of 22 magnitude faster with the proposed model. The accuracy of the 23 proposed model is within 10% of the respective noise computed 24 with a commercial electromagnetics simulator using the finite 25 element method. An analysis including the effect of substrate 26 resistivity on the crosstalk noise is also presented. 27 Index Terms-Mutual inductance, crosstalk noise, inductive 28 links, power distribution networks, high frequency, contactless 29 3-D systems. 30 I. INTRODUCTION 31 T HREE-DIMENSIONAL integration is a promising tech-32 nology providing multi-functional, high performance, 33 and low power electronics [1]. Especially heterogeneous 34 3-D ICs, are predicted, according to ITRS, to be a poten-35 tial solution for the many challenges encountered by the 36 Mobile and IoT markets [2]. The wider uptake and com-37 mercialisation of 3-D ICs, however, requires effective inter-38 tier communication. Several approaches are considered for 39 inter-tier communication, with through silicon vias (TSV) 40 being the most prominent. Alternatively, contactless solutions