2012
DOI: 10.1103/physrevb.85.165437
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Interacting resonant-level model with long-range interactions: Fast screening and suppression of the zero-bias conductance

Abstract: The effects of long-range interactions in quantum transport are still largely unexplored, mainly due to the difficulty of devising efficient embedding schemes. In this work we present a substantial progress in the interacting resonant level model by reducing the problem to the solution of Kadanoff-Baym-like equations with a correlated embedding self-energy. The method allows us to deal with short-and long-range interactions and is applicable from the transient to the steady-state regime. Furthermore, memory ef… Show more

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Cited by 11 publications
(22 citation statements)
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“…The system is driven out of equilibrium by the sudden switch-on of an external biasĤ V = α V αNα , witĥ N α = jn αj the total number of electrons in lead α and V = V L − V R the voltage drop. We observe that the Hamiltonian H reduces to the interacting resonant level model [12][13][14]24 for λ = 0 and to the Anderson-Holstein model [15][16][17][25][26][27] for U = 0. In a recent work Maier and Komnik studied the nonequilibrium steady-state properties ofĤ at the Toulouse point.…”
Section: Low-energy Hamiltonianmentioning
confidence: 91%
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“…The system is driven out of equilibrium by the sudden switch-on of an external biasĤ V = α V αNα , witĥ N α = jn αj the total number of electrons in lead α and V = V L − V R the voltage drop. We observe that the Hamiltonian H reduces to the interacting resonant level model [12][13][14]24 for λ = 0 and to the Anderson-Holstein model [15][16][17][25][26][27] for U = 0. In a recent work Maier and Komnik studied the nonequilibrium steady-state properties ofĤ at the Toulouse point.…”
Section: Low-energy Hamiltonianmentioning
confidence: 91%
“…The central approximation of our truncation scheme consists in replacing the average on the right-hand side of Eq. (14) with…”
Section: B Equations Of Motionmentioning
confidence: 99%
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“…The importance of extended interaction in nano-scale devices has also been addressed, for electron-electron interaction, in recently developed approaches such as Refs. [13,76].…”
Section: Introductionmentioning
confidence: 99%
“…The importance of extended interaction in nano-scale devices has also been addressed, for electron-electron interaction, in recently developed approaches such as Refs. [13,76].In the present paper, we also consider interactions existing beyond the central region. We apply our recently developed formalism 73 for fully interacting systems to a specific model of a single-molecule nanojunction.…”
mentioning
confidence: 99%