Interaction between confined phonons and photons in periodic silicon resonators

Iskandar, Alexander A.; Gwiazda, Agnieszka; Younes, J.; Kazan, M.; Bruyant, Aurélien; Tabbal, M.; Lerondel, Gilles

doi:10.1103/physrevb.97.094308

Cited by 4 publications

(2 citation statements)

References 67 publications

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“…Second, the mode line shape is irreversible; that is, when the temperature rises to 1000 K and goes back down, the

E_{2}^{High}

mode displays completely different line shapes than the ones displayed when heating the sample. As the average grain size is too high to confine phonons and cause line broadening, [ 30 ] the observed behavior of the Raman line shape can only be due to the displacement of the

E_{2}^{High}

mode resonance along the ridge of the two‐phonon DOS when the temperature changes and to a marked effect of thermal annealing on the two‐phonon DOS. A numerical technique for extracting from the recorded Raman spectra the two‐phonon DOS of the measured samples before and after thermal annealing is presented below.…”

Section: Resultsmentioning

confidence: 99%

Raman measurement of the effect of lattice defects on the two‐phonon density of states in ZnO

Nour-Al-Deen

El-Kurdi

Patra

et al. 2021

J Raman Spectroscopy

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The resonance of the E2High mode of the zinc oxide (ZnO) lattice occurs near a ridge‐like structure of the two‐phonon density of states (DOS). The renormalization of the harmonic frequency of the E2High mode using perturbation‐theory with first‐principles calculations of the two‐phonon DOS is usually used to describe the Raman spectrum of this mode. In this contribution, we tackle the inverse problem; that is, we derive the two‐phonon DOS in ZnO using numerical analysis of Raman measurements of the E2High mode. We vary the temperature to displace the resonance of the E2High mode along the ridge and detect a wide spectrum of the two‐phonon DOS in ZnO. We first derive the two‐phonon DOS by increasing the temperature from 300 K to 1000 K with a 20 K step. Next, we perform the same study but decrease the temperature from 1000 K to 300 K to observe how the two‐phonon DOS changes due to thermal annealing. The results show that lattice defects significantly enhance the two‐phonon DOS, which highlights the need for an effective thermal management strategy when ZnO lattice defects are harnessed for technology applications.

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“…Second, the mode line shape is irreversible; that is, when the temperature rises to 1000 K and goes back down, the

E_{2}^{High}

E_{2}^{High}

Section: Resultsmentioning

confidence: 99%

Raman measurement of the effect of lattice defects on the two‐phonon density of states in ZnO

Nour-Al-Deen

El-Kurdi

Patra

et al. 2021

J Raman Spectroscopy

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“…Unlike for c-Si, in the case of SiNSs, the abovementioned k = 0 selection rule gets relaxed, first reported by Richter et al [71] and Campbell and Fauchet [72] and later on validated by many others. [37,41,66,[73][74][75][76][77][78][79][80] As a consequence of momentum relaxation, phonons other than the zone centered ones, governed by phonon dispersion relation, also contribute in a crystallite of finite dimension. This results in a change in the first order Raman spectrum, which is typically Lorentzian for crystalline materials.…”

Section: Origin Of Asymmetric Raman Line Shape In Siliconmentioning

confidence: 99%

Effect of some physical perturbations and their interplay on Raman spectral line shapes in silicon: A brief review

Kumar

Tanwar

2021

J Raman Spectroscopy

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Raman spectroscopy is a proven versatile tool for characterization of materials spanning almost all areas of science because of its ability to non-invasively extract information about materials. This technique is able to detect any perturbation in a system that can affect the phonons. A detailed discussion on various factors that affect the Raman line shape for a material has been summarized here by taking the example of silicon. Methods to identify the actual reason(s) behind the observed Raman spectral line shape have also been briefly discussed. Raman line shape obtained from silicon nanostructures when analyzed closely along with their bulk counterparts, reveals important information about the quantum confinement in such systems characterized by the Bohr's exciton radius. Raman line-shape parameters are analyzed closely to understand the influence of any perturbation like quantum confinement, heavy doping, temperature rise, pressure, excitation wavelength, electronphonon interaction, and so on. Current review briefly deals with the origin of asymmetric Raman line shapes in (nano-) silicon due to various physical perturbations and their interplays, which becomes the origin of different line shapes. Advantages of using Raman microscopy in analyzing subtler physical processes taking place in a semiconductor have also been underlined.

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Mid-IR photothermal measurement of substantial heat transport by surface waves of polar amorphous films supported on silicon

Hamyeh

Tauk

Adam

et al. 2020

Journal of Applied Physics

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We present measurements of significant thermal diffusivity by surface electromagnetic waves of an ultra-thin polar and amorphous dielectric film deposited on silicon (Si). We used a photothermal-beam-deflection technique with a modulated mid-infrared heating source to excite and launch surface electromagnetic waves onto the surface of an amorphous silicon carbide (a-SiC) film deposited on Si and generate periodic temperature and refractive index gradients above the sample surface. These gradients are capable of periodically deflecting a probe beam, passing very close to the surface, at the modulation frequency of the heating beam. We have fitted the measured probe beam deflection to an analytical model for the mirage effect that takes into account the thermal anisotropy of the measured sample to infer the contribution of the surface electromagnetic waves of the a-SiC film to thermal diffusivity in the plane of the sample under study. We found that reducing the thickness of the a-SiC film promotes the interaction between the surface electromagnetic waves propagating on either side of the a-SiC film, which significantly enhances thermal diffusivity in the plane of the measured sample. We also found that in-plane thermal diffusivity by surface electromagnetic waves on an amorphous silicon carbide film a few nanometers thick is several orders of magnitude greater than thermal diffusivity by phonons in silicon. We believe that the results obtained provide a better understanding of the physics of electromagnetic waves confined to solid surfaces.

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Interaction between confined phonons and photons in periodic silicon resonators

Cited by 4 publications

References 67 publications

Raman measurement of the effect of lattice defects on the two‐phonon density of states in ZnO

Raman measurement of the effect of lattice defects on the two‐phonon density of states in ZnO

Effect of some physical perturbations and their interplay on Raman spectral line shapes in silicon: A brief review

Mid-IR photothermal measurement of substantial heat transport by surface waves of polar amorphous films supported on silicon

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