The interaction between dislocations and grain boundaries is the principal factor for determining the mechanical properties and the plastic deformation behavior of metals. It is possible to control the grain-boundary microstructure and the macroscopic behavior has been widely exploited for scientific and industrial applications. In atomic scale, however, specific interaction characteristics such as the reaction energy and pathway have yet to be revealed. We have investigated the interaction process between a dislocation and an energetically stable grain boundary, and the quantitative characteristics were determined via atomistic transition state analysis. As a result, the interaction energy is found to be 1.16ϫ 10 −1 eV/ Å, which is 10 4 times higher than the Peierls potential. The lattice dislocations subsequently experience anomalous dissociations on the grain boundary, which becomes a key factor for the previously unexplained dislocation disappearance and grain-boundary migration.The dislocation-grain-boundary process is fundamental to the improvement of the mechanical properties of metallic materials. This process contributes significantly to plastic deformation as well as dislocation-dislocation interactions. These lattice defects have been effectively utilized for material strengthening as determined by the Hall-Petch relationship. 1,2 The detailed atomic structure of a low-angle grain boundary has been observed using high-resolution transmission electron microscopy ͑TEM͒. 3 Piled-up dislocations at grain boundaries, as well as the disappearance of dislocations from the interaction between the dislocations and the grain boundaries under indentation-induced stress, have been observed recently by in situ nanoindentation with TEM. 4,5 Computer simulations based on atomistic models have advanced over the last few decades and have allowed us to calculate the properties of typical coincidence site lattice ͑CSL͒. Basic properties of CSL grain boundaries, restricted to low-value CSLs such as ⌺3 and ⌺5, can be calculated by density-functional theory ͑DFT͒. 6 The effect of impurities in these low-sigma CSLs has been investigated. 7-9 Presently, DFT calculations have difficulty in correctly describing the dislocation-grain-boundary system. Atomistic simulations using empirical potentials have been used in a large number of studies of grain boundaries and dislocations. The equilibrium structures and corresponding grain-boundary energies of various kinds of tilt CSLs were investigated. 10 Monte Carlo simulations were carried out for the grain-boundary sliding process and vacancy effect. 11,12 Molecular-dynamics ͑MD͒ simulations have been performed to investigate the nanoscale plastic deformation. [13][14][15] While polycrystalline materials used in actual equipment include various types of grain boundaries, the knowledge and information obtained by observations of the total system cannot be applied directly to nanoscale materials produced by recent miniaturization technology. The fundamental mechanisms of the interactio...