“…However, a high Li content in HT ZnO is an issue of concern and postgrowth treatment is required for its reduction [7,8]; especially, Li exhibits a so-called amphoteric behavior resulting in highly compensated material [9,10]. In as-grown HT ZnO, Li resides predominantly on Zn site [9], forming Li Zn acceptors, but can be potentially kicked out to an interstitial donor position (Li I ) during, for instance, postimplantation anneals [11]. Accordingly, HT ZnO, naturally containing $2 Â 10 17 Li=cm 3 , is a suitable model system to identify dominating residual point defects involved in the Li Zn kick-out mechanism.…”