Interaction of Al layers with polycrystalline Si

Abstract

Auger electron spectroscopy, MeV 4He+ backscattering spectrometry and scanning electron microscopy have been used to investigate interactions between Al films and polycrystalline layers of CVD Si deposited on SiO2. Depth profiling techniques showed that intermixing of the Al and Si occurred in the 400–560 °C temperature range (i.e., below the eutectic). Dissolution of the poly Si into the Al film occurs followed by nucleation and growth of Si crystallites in the Al film. The morphology of the final structure depends on the relative thicknesses of the as-deposited Al and Si layers. In the case of the original Al thickness being greater than that of the Si, the Si forms large precipitates in the Al matrix. For Al layers thinner than those of the Si, a nearly continuous Si film is formed on the outer surface. The thickness of this final Si film is approximately that of the original Al layer. The remaining Si and the Al form a two-phase layer between the outer Si film and the SiO2 substrate.

Reaction between Hydrogenated Amorphous Silicon and Aluminum Film

“…The lateral growth comes to end, when the Al film has been displaced by an almost continuous layer of Si crystallites (3). In the present case a similar phenomenon is observed on the growth of crystalline Si at 523K.…”

MOS Characteristics of Substituted Al Gate on High-<tex>$kappa$</tex>Dielectric

“…Polysilicon can fully be replaced with Al under the presence of Ti on top of Al. Without the Ti capping layer, the replacement takes place only partially and in a very nonuniform manner [11], [12].…”

Arsenic Dopant Influence upon the Sintering Behavior of the Aluminum‐Polysilicon Interface

“…In the samples of set I, no implantation was made to provide comparison with doped samples and previous works using intrinsic poly-Si (3). The next four sets of samples were tks implanted, but various poly-Si microstructures were created in order to analyze effects related to crystallinity.…”