Interaction of both charge density waves in NbSe3 from interlayer tunneling experiments

Орлов, А. П.; Latyshev, Yu. I.; Smolovich, A. M.; Monçeau, P.

doi:10.1134/s0021364006140104

Cited by 10 publications

(6 citation statements)

References 14 publications

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“…The analysis based on simple Ginzburg-Landau theory [24] pointed out that phase-locking effect can be accompanied by small enhancement of CDW1 energy gap below T p2 . The observed gap enhancement [23] is small, δΔ1/Δ1 ≈ 10%, however, that is reproducibly observed on interlayer tunneling spectra. That points out to the high resolution of this technique.…”

Section: Cdw Gap Features On Interlayer Tunneling Spectra Of Nbsesupporting

confidence: 51%

Interlayer Tunneling In Stacked Junctions Of High Temperature Superconductors, Cdw Materials And Graphite

Latyshev

NATO Science for Peace and Security Series B: Physics and Biophysics

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Abstract.A short review on interlayer tunneling studies of the stacked junctions of layered high temperature superconductors (HTSC), charge density wave (CDW) materials and graphite is presented. We specify individual features of each class of these materials and common features of interlayer tunneling. They are characterized by the layered crystalline structure of those materials. We emphasize the importance of the phase interlayer coupling in superconducting or CDW electron condensed states that provides interlayer coherent transport. We found that breaking of the phase coherence often happens via formation of phase topological defects (phase vortices) in one elementary junction of the stack that gives an opportunity for interlayer tunneling spectroscopy.Keywords: interlayer tunneling, Bi 2 Sr 2 CaCu 2 O 8+x , N bSe 3 , T aS +3 , KM o 6 O 17 , graphite, energy gap, pseudogap, conductance peak IntroductionMany layered conducting materials of different classes as superconductors, CDW materials, semimetals (graphite) has a common microscopic arrangement where highly conducting elementary planes of atomic thickness are separated by isolating elementary layers of atomic thickness. Macroscopically, that is characterized by the enormously high anisotropy of the in-plane and the out-of-plane conductivity, achieving 10 3 -10 4 in those materials. Microscopically, the interlayer tunneling is associated with interlayer tunneling over intrinsic barriers. The method first appeared in studies of layered HTS materials [1] and later has been adapted to layered manganites [2], CDW materials [3] and graphite [4].

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Section: Cdw Gap Features On Interlayer Tunneling Spectra Of Nbsesupporting

confidence: 51%

Interlayer Tunneling In Stacked Junctions Of High Temperature Superconductors, Cdw Materials And Graphite

Latyshev

NATO Science for Peace and Security Series B: Physics and Biophysics

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“…As the most prominent features of the interlayer tunneling spectra there were found the CDW gap peaks for both CDWs in NbSe 3 at the bias voltages V = 2Δ 1,2 [2,4] In other words that means a local phase slippage between adjacent chains. The threshold voltage for the formation of CDW phase soliton in some sense is similar to the critical current I c in a Josephson junction since at I > I c the stationary phase distribution across the junction becomes non-stationary and fluxons starts to move along the junction to release the critical phase difference by phase slippage [6].…”

Section: Resultsmentioning

confidence: 95%

Comparison of phase slippage processes in Josephson junctions and charge-density wave stacked junctions

Latyshev

2012

Low Temperature Physics

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“…From interlayer tunnelling technique (see sec. 9.6), it was also shown that the formation of the low-T CDW gap in NbSe 3 is accompanied by an increase of the high-T CDW below T P2 [533].…”

Section: Cdw Deformations On Compounds With a Semiconducting Ground S...mentioning

confidence: 83%

Electronic crystals: an experimental overview

Monceau

2013

Preprint

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This article reviews the static and dynamic properties of spontaneous superstructures formed by electrons. Representations of such electronic crystals are charge density waves and spin density waves in inorganic as well as organic low dimensional materials. A special attention is paid to the collective effects in pinning and sliding of these superstructures, and the glassy properties at low temperature. Charge order and charge disproportionation which occur in organic materials resulting from correlation effects are analysed. Experiments under magnetic field, and more specifically field-induced charge density waves are discussed. Properties of meso-and nanostructures of charge density waves are also reviewed.

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Interaction of both charge density waves in NbSe3 from interlayer tunneling experiments

Cited by 10 publications

References 14 publications

Interlayer Tunneling In Stacked Junctions Of High Temperature Superconductors, Cdw Materials And Graphite

Interlayer Tunneling In Stacked Junctions Of High Temperature Superconductors, Cdw Materials And Graphite

Comparison of phase slippage processes in Josephson junctions and charge-density wave stacked junctions

Electronic crystals: an experimental overview

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