Interaction of cesium and oxygen on W(110)

Papageorgopoulos, C.A.; Desplat, J.‐L.

doi:10.1016/0039-6028(80)90246-0

Cited by 139 publications

(17 citation statements)

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“…The work function of CsFe 2 As 2 is one of the lowest reported for any material. Coating a surface with Cs has been widely used to lower a sample's work function and values between 1.0 eV and 1.4 eV are typical [46][47][48][49][50][51][52] . This technique is for example applied for photocathodes such as Cs-O coated GaAs [47][48][49][50] .…”

Section: Resultsmentioning

confidence: 99%

Low work function in the 122-family of iron-based superconductors

Pfau

Soifer

Sobota

et al. 2020

Phys. Rev. Materials

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We determine the work functions of the iron arsenic compounds AFe2As2 (A = Ca, Ba, Cs) using photoemission spectroscopy to be 2.7 eV for CaFe2As2, 1.8 eV for BaFe2As2, and 1.3 eV for CsFe2As2. The work functions of these 122 iron-based superconductors track those of the elementary metal A but are substantially smaller. The most likely explanation of this observation is that the cleaving surface exposes only half an A-layer. The low work function and good photoemission cross section of BaFe2As2 and CsFe2As2 enable photoemission even from a common white LED light.

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Section: Resultsmentioning

confidence: 99%

Low work function in the 122-family of iron-based superconductors

Pfau

Soifer

Sobota

et al. 2020

Phys. Rev. Materials

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“…This indicates that the bonding between the alkali metal adsorbate and the silicon substrate is weak [34,35] especially if a comparison is made with transition metal surfaces (on which the alkali metal is strongly bonded to the surface [15,17]) where temperatures well above 1000° C are necessary to desorb the alkali overlayer [38].…”

Section: Methodsmentioning

confidence: 99%

Progress into Understanding of Alkali Metal Interaction with a Silicon Surface

Soukiassian

1992

Acta Phys. Pol. A

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The atomic and electronic structure and interface formation of alkali metal (Na, K, Rb, Cs) and Si(100)2 x 1 surfaces is investigated by photoemission -XPS, UPS -using synchrotron radiation, scanning tunneling microscopy (STM) and by photoemission extended X-ray absorption fine structure (PEXAFS) experiments. The XPS-UPS results indicate that the alkali metal-silicon bond is a weak and polarized covalent bonding even at low coverages with adsorbate metallization at the monolayer. In contrast to III-V semiconductor surfaces, alkali metals do not induce significant structural changes of the surface: STM images performed with atomic resolution for the representative K/Si(100)2x 1 systems demonstrate that, at one monolayer coverage, the K atoms form one-dimensional linear metallic chains parallel to the Si dimers rows (110) direction and distant by 7.68 A with a single site of adsorption. Below half a monolayer, the K atoms occupy various coexisting sites with no long range order. An ordering transition occurs around half a monolayer in which the adsorbate-adsorbate interaction, which was so far neglected in theoretical calculations, appears to be the leading driving force. The proposed models and concepts are discussed and compared to the latest state-of-art theoretical calculations.

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“…The K-Si distance was measured experimentally by SEXAFS to be 3.14 A at one K monolayer which corresponds to the exact sum of K and Si covalent radii [35]. from metal surfaces [40]. from metal surfaces [40].…”

Section: -Alkali Metal/group IV Semiconductor Interfaces: Electronicmentioning

confidence: 99%