Interaction of dopant atoms with stacking faults in silicon

Ohno, Yutaka; Tokumoto, Yuki; Taneichi, H.; Yonenaga, Ichiro; Togase, Kensuke; Nishitani, Shigeto R.

doi:10.1016/j.physb.2011.08.064

Cited by 8 publications

(2 citation statements)

References 15 publications

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“…Shunt resistance and FF, however, are not decreased after PID in the n‐type solar cell, and it can be argued that the stacking faults in the emitter of the n‐type solar cells are not active after PID. From a study of the interaction energy between the silicon doping type and the stacking faults, this phenomenon can be interpreted by the relationship between the dopant in the silicon and the stacking faults . P‐type and n‐type dopants show (−) charges and (+) charges after they are activated in the silicon, respectively.…”

Section: Resultsmentioning

confidence: 99%

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Bae

Lee

et al. 2017

Energy Science & Engineering

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N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation (PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency (QE), and electroluminescence (EL). The possible causes for the change in the external quantum efficiency (EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results. 31

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Section: Resultsmentioning

confidence: 99%

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Bae

Lee

et al. 2017

Energy Science & Engineering

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“…[ 51,55,60 ] Moreover, on p ‐doped areas, the interaction of boron with Si SF would be too weak to sufficiently reduce the Si SF energy and allow the

{Na}^{+}

penetration according to theoretical considerations. [ 143,144 ] The third degradation mechanism happens after

\approx 96

h and has been further classified in PID‐c by the same authors. [ 67 ] It is characterized by another FF and

V_{oc}

decrease with a

J_{02}

n_{2}

, and

1000 / R_{sh}

increase.…”

Section: Pid In Bifacial Pv Modules: Degradation Mechanisms and Recov...mentioning

confidence: 99%

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Molto

Mahmood

et al. 2023

Energy Tech

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Bifacial modules are increasingly deployed in the field and are expected to represent half of the market share within 10 years. Their rear structure differs from monofacial modules to allow additional light absorption. However, it brings new reliability challenges to address. In particular, the risk of potential‐induced degradation (PID) is increased as both module sides are impacted. Different PID processes have been identified in the literature: shunting type (PID‐s), polarization type (PID‐p), Na penetration type, and corrosion type (PID‐c). Their occurrence depends on the photovoltaic system configuration as well as the module's materials. Apart from PID‐s, PID processes are not well understood and extensive research is needed to elucidate the PID scenario and underlying mechanisms. Herein, current knowledge about PID processes and their impact on the main bifacial modules in the market are gathered with the aim to guide future research. Bifacial module technologies and leakage current paths leading to PID are described. Indoor and outdoor PID testing methods are detailed. For each bifacial module technology, the PID processes are investigated with their indicators, mechanism and recovery process. PID‐impacting factors and limitation solutions are finally reported and a state of the art on PID modeling is presented.

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Defects in Crystalline Silicon: Dislocations

Yonenaga

2019

Handbook of Photovoltaic Silicon

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Interaction of dopant atoms with stacking faults in silicon

Cited by 8 publications

References 15 publications

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Defects in Crystalline Silicon: Dislocations

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Interaction of dopant atoms with stacking faults in silicon

Cited by 8 publications

References 15 publications

Potential induced degradation of n‐type crystalline silicon solar cells with p+ front junction

Potential induced degradation of n‐type crystalline silicon solar cells with p+ front junction

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Defects in Crystalline Silicon: Dislocations

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Product

Resources

About

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction