Interaction of gold with dislocations in silicon

Pichaud, B.; Mariani-Regula, G.; Yakimov, E. B.

doi:10.1016/s0921-5107(99)00389-x

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…The fast rise of the contrast at about 50 K followed by monotonic contrast increase with temperature is seen. 33,34 Calculations of atomic and electronic structures of threading dislocations in Wurtzite GaN ͑Refs. 30 It was demonstrated that such contrast behavior occurs when recombination at dislocations is controlled by deep centers.…”

Section: Resultsmentioning

confidence: 99%

Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers

Maximenko

Freitas

Myers-Ward

et al. 2010

Journal of Applied Physics

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Local recombination properties of threading screw and edge dislocations in 4H-SiC epitaxial layers have been studied using electron beam induced current ͑EBIC͒. The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombination activity. Temperature dependence of EBIC contrast of dislocations suggests that their recombination activity is controlled by deep energy levels in the vicinity of dislocation cores. This paper shows that the type of dislocation ͑screw or edge͒ can be identified from analysis of EBIC contrast.

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Section: Resultsmentioning

confidence: 99%

Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers

Maximenko

Freitas

Myers-Ward

et al. 2010

Journal of Applied Physics

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“…Thus, the information about these obstacles for dislocation motion could be obtained from such experiments [15]. It was also shown [16] that besides the self-interstitial annihilation gold gettering by dislocations can be also studied in such experiments. Such gettering of interstitial gold could be especially essential at high diffusion temperatures and it provides the additional way for the extended defect effect on gold diffusion.…”

Section: Estimation Of Extended Defect Efficiency As a Sinks For Self...mentioning

confidence: 99%

Gold Diffusion as a Tool for Defect Characterization in Si

Feklisova

Yakimov

2003

SSP

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An application of gold diffusion investigations for the defect structure characterization in Si is illustrated by the experiments carried out on samples containing different types of defects. A possibility to obtain information about grown-in defects in Si from gold diffusion experiments is demonstrated by studies of Cz and FZ crystals and crystals doped with nitrogen. The results of gold diffusion application for the study of gettering efficiency of nanocavities produced by light ion implantation and for the characterization of extended defects are presented. The efficiency of gold diffusion experiments for investigations of intrinsic point defect generation and annihilation in Si is demonstrated.

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“…Dislocation networks formed by silicon wafer bonding were analyzed using a combination of EBIC and PL analyses [33]. DLTS is also facilitated by combining EBIC or LBIC techniques to address dislocation-impurity interaction [82] and to detect electrically active defects [83]. The LBIC mapping technique at different wavelengths together with DLTS enabled researchers to recognize and detect these arrays and to evaluate their recombination strength [84].…”

Section: Indirect Diagnosis Of Dislocationsmentioning

confidence: 99%