Interaction of H with epitaxial Er silicide layers on Si(111): adsorption versus absorption

Saintenoy, S.; Wetzel, P.; Pirri, Candido Fabrizio; Bolmont, D.; Gewinner, G.

doi:10.1016/0039-6028(95)01060-2

Cited by 13 publications

(9 citation statements)

References 18 publications

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“…1 (a). In previous angle-resolved photoemission (ARP) [6] and high-resolution electron energy loss spectroscopy (HREELS) [7] studies of hydrogen chemisorption on ErSi 2 , we have found that H is adsorbed in Si surface and Er subsurface sites. These two sites correspond to the saturation of the available dangling bonds of the silicide buckled Si top layer leading to the formation of a monohydride phase similar to the Si(111)-(1 × 1) H surface, and to Er-H bonds apparently related to interstitial sites of the hexagonal Er monolayer in a way that reminds rare-earth hydrides, respectively.…”

mentioning

confidence: 94%

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi ₂ upon H dosing

Wetzel¹,

Pirri²,

Gewinner³

1997

Europhys. Lett.

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Hydrogen-induced reconstruction of 2-dimensional (2D) ErSi2 epitaxially grown on Si( 111) is studied by Auger-electron diffraction (AED) and low-energy electron diffraction (LEED). The intensity of the Er MNN Auger line is measured vs. polar angle along the [1 −2 1] and [−1 2 −1] azimuths for clean and H-saturated (1 × 1) ErSi2 silicides. The atomic structure of clean 2D silicide, previously established by AED as well as other techniques, consists of a hexagonal monolayer of Er located underneath a buckled Si layer comparable to the Si(111) substrate double layers. Moreover, for clean 2D ErSi2 only the B-type orientation is observed, i.e. the buckled Si top layer is always rotated by 180 • around the surface normal relative to the relevant double layers of the substrate. After atomic H saturation, AED reveals drastic changes in the silicide structure involving a major most remarkable reconstruction of the Si bilayer termination. The latter is found to switch from B-type to A-type orientation upon H dosing, i.e. H-saturated 2D ErSi2 exhibits a buckled Si top layer oriented in the same way as the substrate double layers. A comparison with single scattering cluster simulations demonstrates that the latter phenomenon is accompanied by a large expansion of the Er-Si interlayer spacing close to 0.3 Å.

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mentioning

confidence: 94%

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi ₂ upon H dosing

Wetzel¹,

Pirri²,

Gewinner³

1997

Europhys. Lett.

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“…This peak at 0.9 eV is similar in energy to a feature noted by Saintenoy et al resulting from the 3p z electrons in vacancies. 31 This would explain its absence from the 2D spectra.…”

Section: A Upsmentioning

confidence: 96%

“…31 In the 1 ML spectrum, the peak labeled as a is thought to be a superposition of two features: both a Si surface feature and a Ho feature. The surface feature previously noted by Saintenoy et al 31 at −0.1 eV relative to E F has been explained as a Si surface state from p z dangling bonds. A large emission is also expected to arise from the Ho 5d emission at E F .…”

Section: A Upsmentioning

confidence: 99%

“…The much broader peak at d is due to the corelike RE 4f states and is therefore not involved in the silicide bonding structure and would therefore not appear in the MDS spectrum. [31][32][33] A slight change in the spectra for the 3D silicides is expected due to the presence of vacancies within the structure, slightly modifying the DOS. For the 3D silicides, some of the features, such as c and d, are similar to the 1 ML case, although some relocate slightly in energy as a result of the changes in crystal potential.…”

Section: A Upsmentioning

confidence: 99%

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Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

et al. 2009

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The surface electronic structure of two-and three-dimensional Ho silicides grown on Si͑111͒ has been studied with the techniques of metastable de-excitation spectroscopy ͑MDS͒ and ultraviolet photoemission spectroscopy. Electronic structure differences between the two cases are examined, and the extreme sensitivity of MDS to the surface density of states ͑DOS͒ allows a direct comparison between deconvolved spectra and ab initio density-functional theory calculations. This comparison shows a good agreement between the DOS calculated for the Si͑111͒-1 ϫ 1-Ho structure and MDS data obtained from an almost-complete layer of twodimensional Ho silicide. The dominant role of the topmost silicon bilayer in determining the surface electronic properties is revealed.

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“…In the specific case of rare-earth ͑RE͒ metals on silicon, technological interest arises from the fact that RE silicides on silicon have been found to have unusual Schottky barrier heights of 0.3-0.4 eV for n-Si and 0.7-0.8 eV for p-Si. 1,2 Furthermore, from a fundamental point of view, the Er/Si͑111͒ surface is of interest due its unusual feature of forming a two-dimensional ͑2D͒ silicide layer on top of Si͑111͒ for an Er coverage of 1 monolayer ͑ML͒, [3][4][5][6][7][8][9][10][11] characterized by a 1ϫ1 low-energy electron diffraction ͑LEED͒ pattern. Such 2D silicides have also been suggested for the Ho/Si͑111͒ and Dy/Si͑111͒ surfaces 12 and appear to be unique to trivalent rare-earth metals.…”

Section: Introductionmentioning

confidence: 99%

Medium-energy ion scattering studies of two-dimensional rare-earth silicides

et al. 2000

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Medium-energy ion scattering ͑MEIS͒ has been used to determine the atomic structure of two-dimensional ͑2D͒ rare-earth silicides on Si͑111͒. In the case of the Si͑111͒1ϫ1-Er 2D silicide surface, the MEIS results refine previously published results, but in the case of the Si͑111͒1ϫ1-Ho surface, this work represents to our knowledge the first full quantitative structural analysis that reveals a structure similar to that of the Si͑111͒1 ϫ1-Er surface and directly supports a model in which a rare-earth monolayer resides below a Si bilayer close to bulklike termination.

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Interaction of H with epitaxial Er silicide layers on Si(111): adsorption versus absorption

Cited by 13 publications

References 18 publications

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi ₂ upon H dosing

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi ₂ upon H dosing

Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

Medium-energy ion scattering studies of two-dimensional rare-earth silicides

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Interaction of H with epitaxial Er silicide layers on Si(111): adsorption versus absorption

Cited by 13 publications

References 18 publications

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi 2 upon H dosing

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi 2 upon H dosing

Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

Medium-energy ion scattering studies of two-dimensional rare-earth silicides

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Product

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Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi ₂ upon H dosing

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi ₂ upon H dosing