Interaction of interstitials with buried amorphous layer in silicon

Oliviero, E.; David, Marie‐Laure; Fichtner, P.F.P.

doi:10.1002/pssc.200881444

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…Therefore, to improve defect engineering, it is important to be able to eliminate/control these extended defects. 7 Pre-amorphization with lighter elements than silicon could provide a solution. In this paper, the effect of lithium implantation is investigated.…”

Section: Introductionmentioning

confidence: 99%

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Oliviero

David

Fichtner

et al. 2013

Journal of Applied Physics

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The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation. V C 2013 American Institute of Physics.

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Section: Introductionmentioning

confidence: 99%

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Oliviero

David

Fichtner

et al. 2013

Journal of Applied Physics

Self Cite

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show abstract

“…Blistering, swelling and embrittlement are unwanted effects in these materials, which are used in fusion or fission reactors [1]. Bubble/cavity formation, blistering and swelling were also studied in semiconductors as smart tools for applications such as impurity gettering [2], strain relaxation [3], thin layer separation [4] and defect engineering [5]. Bubble formation and growth in such materials is a complex phenomenon involving point defect production/ recombination, mobility and agglomeration.…”

Section: Introductionmentioning

confidence: 99%