Interaction of nitrogen with Si(111)-7×7 surfaces at elevated temperatures

Ha, Jeong Sook; Park, Kang Ho; Yun, Wan Soo; Ko, Young Jo; Kim, Seong Keun

doi:10.1016/s0039-6028(99)00370-2

Cited by 20 publications

(5 citation statements)

References 27 publications

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“…One explanation for this observation is that N 2 reacts with the surface of an aerosolized Si particle to form a silicon nitride passivation layer. It has been shown that thin layers (∼0.5 nm) of silicon nitride are formed on Si(001) and Si(111) when they are exposed to N 2 or N 2 /H 2 mixtures at temperatures between 600 and 1100 °C. , Another possibility is that the particles are oxidized by O 2 that enters the reaction zone either through a leak or as an impurity in the liquid nitrogen tank (the stated O 2 level is 8 ppm). It should be noted in support of this hypothesis that the Ar tank had a lower stated O 2 concentration, and that a different method was used to extract particles into the TDMA system when Ar was the carrier gas.…”

Section: Discussionmentioning

confidence: 99%

Chemical Vapor Deposition of Zirconium Oxide on Aerosolized Silicon Nanoparticles

and

Roberts

2006

Chem. Mater.

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Nanoscale shells of ZrO2 were deposited onto size-selected, aerosolized Si nanoparticles by chemical vapor deposition (CVD). The CVD precursor was nitronium pentanitratozirconate (ZN, [NO2][Zr(NO3)5]), which has been used previously to deposit ZrO2 films on silicon wafers. Silicon nanocrystals were synthesized from silane in a low-pressure nonthermal plasma and were directly extracted from the plasma growth chamber into an atmospheric-pressure aerosol flow tube reactor. The particle streams flowed first through a preheating furnace, which could be set between room temperature and 1000 °C, and then through a differential mobility diameter (DMA) that was set to transmit particles having a mobility diameter of 12 nm. After size selection, ZN was mixed into the carrier gas stream, and the resulting nanocrystal/ZN/carrier gas mixtures passed through a heated reaction zone (T ≈ 100 °C), where deposition took place. The residence time in the reaction zone was approximately 8 s. The extent of deposition was determined by measuring the size distribution function of the postreaction aerosol with a second DMA. Particles were also analyzed by transmission electron microscopy (TEM). The measured changes in peak particle mobility diameter imply that at low-to-moderate ZN partial pressures (<100 Pa), the deposition rate is first-order in ZN partial pressure. At higher partial pressures, the rate increases more slowly with increasing ZN pressure. Possible reasons for these behaviors are discussed. The deposition rate increases with particle preheating temperature; the rate of particles that were preheated to 500 °C is roughly twice that of particles that are not preheated. This behavior is attributed to desorption of hydrogen from the particle surface leading to a more reactive substrate for CVD. We believe that these results are among the first in which CVD is used to coat size-selected, aerosolized nanoparticles and also among the first in which tandem differential mobility analysis (TDMA) is used to measure the rate of a CVD reaction.

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Section: Discussionmentioning

confidence: 99%

Chemical Vapor Deposition of Zirconium Oxide on Aerosolized Silicon Nanoparticles

and

Roberts

2006

Chem. Mater.

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“…It can be done by exposing the atomically clean Si substrate to various N 2 compound reactive gases such as NH 3 [11][12][13][14][15][16][17], NO [18][19][20][21] or other gaseous at high nitridation temperatures or by post exposure thermal annealing. In addition, ion bombardment methods [22][23][24][25] or sputter deposition technique have also been employed. However, use the pure nitrogen gas would be the simplest and easiest way for the nitridation of the Si surface.…”

Section: Different Approachesmentioning

confidence: 99%

“…The atomic nitrogen exposure on Si(111) and Si(001) surfaces at relatively lower nitridation temperatures leads to the formation of amorphous nitride layer and appears with a highly disorder interface of nitride/Si. However, a crystalline interface and well-ordered films of hexagonal β-Si 3 N 4 films have only been observed for nitridation temperature only above 700°C [13][14][15][16][17][22][23][24][25][26][27]. Epitaxial β-Si 3 N 4 formation on Si(111) by thermal annealing of N-irradiated Si(111) surface has been reported by Yamabe et al [28].…”

Section: Different Approachesmentioning

confidence: 99%

Crystalline Silicon Nitride Films on Si(111): Growth Mechanism, Surface Structure and Chemistry down to Atomic Scale

Gangopadhyay¹

2020

Multilayer Thin Films - Versatile Applications for Materials Engineering

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A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si 3 N 4 ) films on Si(111) substrates, their structure, morphology and surface chemistry down to atomic scale have been investigated using various surface analytical techniques such as low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and ESCA microscopy. A radio frequency N 2 plasma source from Epi Uni-bulb has been used for the nitridation of atomically clean Si(111) surfaces. The substrate temperatures during the nitridation process were ranging from 600-1050°C and the plasma exposure times were varied from 5 s for initial nucleation up to 45 min for saturation thickness. The initial stage of N nucleation on Si(111), how the structure and morphology of the nitride films depend on thickness and temperature, surface atomic reconstructions and the nitride film chemical composition are discussed here. All findings are explained in terms of thermally activated inter-diffusion of Si and N atoms as well as the surface adatom diffusion/ mobility.

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“…The morphology and structure of silicon nitride films have been studied using various surface research methods, such as scanning tunneling microscopy (STM), [10][11][12][13][14][15][16][17][18][19] low energy electron microscopy, 8) low energy electron diffraction, 10,11,20) and core-level photoemission, 21) even some theoretical research. 22,23) These studies have focused on the structural characterization of silicon nitride films obtained at high temperatures and high gas exposure.…”

Section: Introductionmentioning

confidence: 99%

“…22,23) These studies have focused on the structural characterization of silicon nitride films obtained at high temperatures and high gas exposure. For instance, it has been found that nitride regions exhibit irregular 8/3 × 8/3 reconstructions, 5) while hexagonal 8 × 8 reconstructions were observed when the substrate temperature is 900-1200 K. 14) The formation of silicon nitride films and the evolution of the surface structure have not been given enough attention, even though the growth process is of great importance, as it affects the quality of the final films. Therefore, it is necessary to observe it.…”

Section: Introductionmentioning

confidence: 99%

Reactions of NH₃ on high-temperature silicon surface and structure evolution during silicon nitride film growth

Zang

Niu

Wang

et al. 2023

Jpn. J. Appl. Phys.

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Temperature and dosage-dependent reactions of NH3 on the Si(111)-(7×7) surface have been studied by low-temperature scanning tunneling microscopy (STM). It was found that the surface reaction exhibited three different dissociative adsorption channels as the temperature increases at low exposure. Under the condition of high exposure, the amorphous structure of silicon nitride film gradually transformed into an ordered phase, with the increase of substrate temperature, and finally presented an 8/3×8/3 structure. This means that both exposure and temperature are critical for forming an ordered surface structure. Furthermore, many adsorbates were observed on the nitride region during the growth process, which is believed to be the intermediate reactants in the nitridation reaction and consumed in the subsequent annealing process to form an orderly and clean surface morphology.

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Interaction of nitrogen with Si(111)-7×7 surfaces at elevated temperatures

Cited by 20 publications

References 27 publications

Chemical Vapor Deposition of Zirconium Oxide on Aerosolized Silicon Nanoparticles

Chemical Vapor Deposition of Zirconium Oxide on Aerosolized Silicon Nanoparticles

Crystalline Silicon Nitride Films on Si(111): Growth Mechanism, Surface Structure and Chemistry down to Atomic Scale

Reactions of NH₃ on high-temperature silicon surface and structure evolution during silicon nitride film growth

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Interaction of nitrogen with Si(111)-7×7 surfaces at elevated temperatures

Cited by 20 publications

References 27 publications

Chemical Vapor Deposition of Zirconium Oxide on Aerosolized Silicon Nanoparticles

Chemical Vapor Deposition of Zirconium Oxide on Aerosolized Silicon Nanoparticles

Crystalline Silicon Nitride Films on Si(111): Growth Mechanism, Surface Structure and Chemistry down to Atomic Scale

Reactions of NH3 on high-temperature silicon surface and structure evolution during silicon nitride film growth

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Reactions of NH₃ on high-temperature silicon surface and structure evolution during silicon nitride film growth