Interaction of Sn atoms with the intrinsic dangling-bond states of Si(111)-(7 × 7)

Lin, Xiuzhu; Chizhov, Ilya; Mai, H.; Willis, R. F.

doi:10.1016/0039-6028(96)00799-6

Cited by 33 publications

(17 citation statements)

References 31 publications

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“…Figure 2 reveals that even at low bias voltages of ±0.4 V, the adatoms in the unfaulted half unit cell ͑UFHUC͒ ͑i.e., with no cluster͒ are very clear due to appreciable tunneling current, indicating that the Si͑111͒ adatoms are characterized by metallic surface states. 14,18 For filled-state STM topographs at negative biases higher than −0.8 V, not only are the contributions from the adatoms, but the rest atom dangling bond and backbond states also become significant as clearly evident in the UFHUC of Fig. 2͑b͒ at −1.4 and −2.0 V. In a recent study, Wang et al used a sharp tungsten tip to observe both rest atoms and adatoms with equal brightness within the UFHUC at −1.5 V sample bias.…”

Section: Resultsmentioning

confidence: 98%

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Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Zilani

Liu

et al. 2006

Phys. Rev. B

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The electronic structure of cobalt-induced magic clusters grown on Si͑111͒-͑7 ϫ 7͒ is investigated by scanning tunneling microscopy, scanning tunneling spectroscopy, and real-space multiple-scattering calculations. Topographical images of a half unit cell of Si͑111͒-͑7 ϫ 7͒ with the cluster acquired at low bias voltages of ±0.4 V show greatly reduced cluster heights; however, the heights of the corner adatoms are unchanged, indicative of the highly localized nature of the charge distribution. Spectroscopic studies of the clusters indicate a band gap of ϳ0.8 eV, suggesting localized nonmetallic behavior. The opening of such a band gap is suggested to be a stabilizing factor for the observed magic clusters. A 65-atom Co-Si cluster is constructed to calculate the momentum-and element-projected density of states. The calculated result identifies that the intense state below the Fermi level at −1.75 V in the experimental spectroscopic curve is primarily due to localized 3d orbitals of Co atoms in the magic clusters.

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Section: Resultsmentioning

confidence: 98%

“…14,18 The surface state observed at 1.3 V originates from exposed Si adatom backbonds in the surface double layer. 14,18 In this study we observe the surface states of the clean region ͑solid line in Fig.…”

Section: Sts Measurements Shown Inmentioning

confidence: 99%

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Zilani

Liu

et al. 2006

Phys. Rev. B

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“…During growth of Sn on an Si(111)-7 × 7 surface, the formation of Sn islands has been observed at small Sn coverages below Θ Sn =1 [53][54][55]. However, in the growth of Sn on an Si(111)-√ 3 × √ 3-Ga(1ML) surface, a flat film of Ga-Sn alloy was formed at Θ Sn ≤ 1.…”

Section: E Growth Of Snmentioning

confidence: 99%

Atomic depth distribution analysis and growth dynamics of metals on metal-covered Si(111) surfaces studied by incident-angle-dependent RHEED-TRAXS (total-reflection-angle x-ray spectroscopy)

Yamanaka

2003

e-J. Surf. Sci. Nanotechnol.

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During observation of reflection high-energy electron diffraction, characteristic x-rays are emitted from surfaces. The intensities of these x-rays change with change in the incident glancing angle (θg) of the primary electron beam, since density distribution of electrons near the surface changes with change in θg. By analyzing θg dependence of x-ray intensities, the depth distribution of elements near the surface can be determined without destruction of the surface. Resolution of depth in this method is one monolayer at the uppermost layers. By using this method, various growth motions of elements, such as substitution, alloying and floating were observed during growth of metals on metal-covered Si(111) surfaces. Morphology and growth modes of metals were significantly altered by preadsorption of other metals, and sometimes very flat metal films that would be applicable for fabrication of future electronic nano devices were obtained. In this review, the method for analysis of depth distribution of elements and growth modes of metals (Au, Ag, Ga, In and Sn) on an Si(111) surface precovered by another metal are described.

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“…Room temperature adsorption of different metals on the Si(111)-(7×7) surface has been extensively studied by scanning tunneling microscopy (STM) in recent years [1][2][3][4][5][6][7][8][9][10]. The interest in metal/Si(111)-(7×7) systems stems from the need to understand the initial stages of the formation of metal/semiconductor interfaces.…”

mentioning

confidence: 99%

“…Room temperature adsorption of different metals such as Pd [1], Ag [2], K [3], Cs [3], Cu [4], Co [5], Pb [6,10], Li [7], In [8] and Sn [9] on the Si(111)-(7×7) surface at submonolayer coverages has been studied by STM. Despite differences in the properties of these metals, some general trends can be noticed in their adsorption behavior, suggesting that the adsorption process is determined to a high degree by the structure of the [11].…”

mentioning

confidence: 99%

STM study of room temperature adsorption of Au on the Si(111)(7×7) surface: evidence for the reaction of Au atoms with Si rest atoms

Chizhov¹,

Lee²,

Willis³

1998

Applied Physics A: Materials Science & Processing

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The initial stages of Au adsorption at sub-monolayer coverages on the Si(111)-(7×7) surface at room temperature have been studied by scanning tunneling microscopy (STM). At very low Au coverages (Θ ∼ 0.01 monolayers) STM images show that some of the triangular sub-unit cells have slightly larger apparent height. These peculiar features are interpreted as being caused by the redistribution of charge in the 7 × 7 unit cell following the adsorption of Au atoms on Si rest atom sites. STM images suggest that there is a charge transfer from the rest atoms to the adatoms and this charge transfer is different in faulted and unfaulted sub-unit cells. The interpretation of the STM results is found to be consistent with the theoretical predictions.

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Interaction of Sn atoms with the intrinsic dangling-bond states of Si(111)-(7 × 7)

Cited by 33 publications

References 31 publications

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Atomic depth distribution analysis and growth dynamics of metals on metal-covered Si(111) surfaces studied by incident-angle-dependent RHEED-TRAXS (total-reflection-angle x-ray spectroscopy)

STM study of room temperature adsorption of Au on the Si(111)(7×7) surface: evidence for the reaction of Au atoms with Si rest atoms

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