Interaction of Stacking Faults with point/extended defects in Fe-He irradiated 6H-SiC

Sen, H.S.; Daghbouj, N.; Li, B.S.; AlMotasem, A.T.; Ge, Fangfang; Zhang, L.; Callisti, M.; Polcar, Tomáš

doi:10.1016/j.actamat.2023.119129

Cited by 6 publications

(1 citation statement)

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“…This resistance is attributed to the preferential twodimensional diffusion of point defects between SFs, which enhances the recombination rate of these defects. Moreover, SFs can act as traps for irradiation-induced defects, aiding in their recovery [15,16]. The presence of SFs also plays a significant role in the nucleation and growth of helium bubbles in 3C-SiC.…”

Section: Introductionmentioning

confidence: 99%

Ab initio study of helium behavior near stacking faults in 3C-SiC

Wang,

Zhang,

Jiang

et al. 2024

J. Phys. D: Appl. Phys.

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First-principles calculations are used to investigate the effects of stacking faults (SFs) on helium trapping and diffusion in cubic silicon carbon (3C-SiC). Both extrinsic and intrinsic SFs in 3C-SiC create a hexagonal stacking sequence. The hexagonal structure is found to be a strong sink of a helium interstitial. Compared to perfect 3C-SiC, the energy barriers for helium migration near the SFs increase significantly, leading to predominant helium diffusion between the SFs in two dimensions. This facilitates the migration of helium towards interface traps, as confirmed by previous experimental reports on the nanocrystalline 3C-SiC containing a high density of SFs. This study also reveals that the formation of helium interstitial clusters near the SFs is not energetically favored. The findings from this study enhance our comprehension of helium behavior in faulted 3C-SiC, offering valuable insights for the design of helium-tolerant SiC materials intended for reactor applications.

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Section: Introductionmentioning

confidence: 99%