Interaction of valence band excitations and terahertz TE-polarized cavity modes

Faragai, I. A.; Pereira, Mauro

doi:10.1007/s11082-013-9780-3

Cited by 10 publications

(3 citation statements)

References 18 publications

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“…In this paper we extend and complement the results of Refs. [4,5] by investigating the influence of dephasing and scattering mechanisms on TE mode, THz antipolaritons in different structures based on GaAs/Al 0.3 Ga 0.7 As multiple quantum wells. As in the case of conduction band transitions, polaritons [6][7][8] and antipolaritons [9] can be realized with either absorptive (passive) or gain (inverted) media.…”

Section: Introductionmentioning

confidence: 99%

THz intervalence band antipolaritons

Faragai¹,

Pereira²

2014

J. Phys.: Conf. Ser.

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THz polaritons and antipolaritons have strong potential for device applications and are a challenging field of fundamental studies. In this paper, we start from a numerically exact nonequilibrium many body solutions and adjust it to a simplified nonlinear dielectric constant approach to the optical susceptibility. The resulting expression is inserted in the wave equation to describe the coupling of TE-polarized THz radiation with an intervalence band transition in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells embedded in microcavities. The energy dispersions relations leading to THz polaritons are investigated. Here we focus on the impact of dephasing and scattering processes for different structures and excitation conditions in an inverted medium leading to antipolaritons.

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Section: Introductionmentioning

confidence: 99%

THz intervalence band antipolaritons

Faragai¹,

Pereira²

2014

J. Phys.: Conf. Ser.

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“…Luminescence, absorption and transmission spectra play a major role in the characterization of new materials and optoelectronic devices operating from the THz to the UV ranges [1][2][3][4][5][6][7] In this paper we apply an accurate analytical approximation for luminescence that can be easily programmed and includes the main many body effects required to describe bulk semiconductors. The luminescence is connected to the nonlinear absorption and gain and the expressions delivered reduce exactly to Elliott's formula in the low density limit.…”

Section: Introductionmentioning

confidence: 99%

Simulations of mid infrared emission of InAsN semiconductors

Oriaku

Pereira

2014

Opt Quant Electron

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“…Semiconductor optical materials are widely studied from the THz to the UV using absorption and luminescence techniques [1][2][3][4][5][6][7]. When charged carriers (electrons and holes) are injected in semiconductors, many body effects play a major role and the underlying complexity often leads to theories which require robust and time consuming algorithms for an accurate mathematical modelling.…”

Section: Introductionmentioning

confidence: 99%