Interaction study of nitrogen ion beam with silicon

Schmidt, Marek E.; Zhang, Xiaobin; Oshima, Yoshifumi; Yasaka, Anto; Kanzaki, Teruhisa; Muruganathan, Manoharan; Akabori, Masashi; Shimoda, Tatsuya; Mizuta, Hiroshi

doi:10.1116/1.4977566

Cited by 5 publications

(4 citation statements)

References 28 publications

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“…The helium atom of the atomic He + ion has one positive charge, whereas the two nitrogen atoms of the molecular ion share the charge and are connected by a covalent bond. The nitrogen bond has a dissociation energy of 9.8 eV and is readily broken when the ion interacts with the substrate, but not during the field ionization process (Schmidt et al, 2017). As mentioned earlier, ions can generate SEs by KEE and PEE, respectively.…”

Section: Discussionmentioning

confidence: 99%

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

et al. 2017

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The recent technological advance of the gas field ion source (GFIS) and its successful integration into systems has renewed the interest in the focused ion beam (FIB) technology. Due to the atomically small source size and the use of light ions, the limitations of the liquid metal ion source are solved as device dimensions are pushed further towards the single-digit nanometer size. Helium and neon ions are the most widely used, but a large portfolio of available ion species is desirable, to allow a wide range of applications. Among argon and hydrogen, $${\rm N}_{2}^{{\plus}} $$ ions offer unique characteristics due to their covalent bond and their use as dopant for various carbon-based materials including diamond. Here, we provide a first look at the $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB enabled imaging of a large selection of microscopic structures, including gold on carbon test specimen, thin metal films on insulator and nanostructured carbon-based devices, which are among the most actively researched materials in the field of nanoelectronics. The results are compared with images acquired by He+ ions, and we show that $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB can offer improved material contrast even at very low imaging dose and is more sensitive to the surface roughness.

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Section: Discussionmentioning

confidence: 99%

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

et al. 2017

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“…We did not analyze any damage around the processing line in this study, but we think that there may have been ion irradiation effects such as amorphousization of GaAs and/or doping of nitrogen into Nb and GaAs within several 10's of nm around the line. 22) However, we think that the amorphousization and doping do not interfere with JJ formation, because the GaAs underneath Nb is not important and the Nb doped with nitrogen forms an NbN superconductor. The line width is smaller than in the Ne GFIS-FIB case, 18) but three times as large as in the He GFIS-FIB case.…”

Section: Device Fabricationmentioning

confidence: 99%

“…17,18) We have focused on GFIS-FIB utilizing nitrogen gas (N 2 GFIS-FIB), which can etch directly at the 10 nm level or finer. 19) Some applications of N 2 GFIS-FIB have been reported, such as secondary ion imaging, 20) photomask repair, 19,21) ion implantation into silicon, 22) and fabrication of quantum point contacts. 23) In this study, we performed single-line etching of Nb thin films by N 2 GFIS-FIB and fabricated JJ devices.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Josephson junctions by single line etching of Nb thin films utilizing nitrogen-gas-field ion-source focused ion beam

Sudo¹,

Akabori²,

Uno³

2022

Jpn. J. Appl. Phys.

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We focused on a focused ion beam (FIB) technology, called nitrogen gas field ion source FIB (N2 GFIS-FIB), which can etch directly at the 10 nm level or finer. We performed single line etching of Nb thin film microbridges deposited by N2 GFIS-FIB and fabricated Josephson junction (JJ) devices. The microbridge area was separated into two parts by the processing line, whose width was around 20 nm. We performed electrical characterizations of the devices at low temperature and observed typical behaviors of JJ devices, such as a superconducting current region and current jumping to the normal current region in some of the deeply etched devices. We also observed an AC resistance oscillation in some of the shallowly etched devices. The oscillation may be due to a sub-harmonic gap structure that originates from Andreev reflection. These results indicate that simple single line etching of Nb by N2 GFIS-FIB can form JJ devices.

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“…Factors limiting the accuracy of the MC simulation method is the fact that each "shot" is performed onto a pristine target (i.e., no accumulation of damage), and it requires experimental data to model the particle-medium interaction as precisely as possible. SRIM is one software package for MC simulation that has proven useful for many cases [36], but other MC codes exist [37,38].…”

Section: Field Ionization Of Molecular Nitrogen Gas and Solid-ion Intmentioning

confidence: 99%

Nitrogen Ion Microscopy

Schmidt¹,

Akabori²,

Mizuta³

2018

Ion Beam Applications

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The gas field ion source (GFIS) can be used to generate beams of helium, neon, hydrogen, and nitrogen ions, among others. Due to the low energy spread and the atomically small virtual source size, highly focused ion beams (FIB) can be obtained. We discuss the history of the GFIS and explain the field ionization and field evaporation process in general. Then, the unique properties of the nitrogen ionization, originating from the molecular nature, are explained. We show how the nitrogen ion microscopy (N2IM) can be used to image and pattern samples. The unique contrast observed in samples with graphene or carbon is reported. Finally, we conclude with an outlook of the technology and possible key applications such as spatially localized nitrogen-vacancy center implantation.

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Interaction study of nitrogen ion beam with silicon

Cited by 5 publications

References 28 publications

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

Fabrication of Josephson junctions by single line etching of Nb thin films utilizing nitrogen-gas-field ion-source focused ion beam

Nitrogen Ion Microscopy

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