The Fourth International Conference on Advanced Semiconductor Devices and MicrosystemHelp me understand this report
Interactions between phases and thermal stability of TiB/sub x/(ZrB/sub x/)-n-SiC 6H contacts
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“…One of the approaches to reduce diffusion at the interface metalSiC is to use amorphous and nano-crystalline films of TiB x and ZrB x to form Schottky barrier to the SiC substrate [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…One of the approaches to reduce diffusion at the interface metalSiC is to use amorphous and nano-crystalline films of TiB x and ZrB x to form Schottky barrier to the SiC substrate [7,8].…”
Section: Introductionmentioning
confidence: 99%
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