Interactions between Sb and As on InAs(0 0 1) surfaces

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

“…Anderson and Millunchick observed atomic bilayer‐height islands appearing when In was predeposited on InAs(001) before Sb 2 exposure to control the final surface reconstruction. [ 28 ] This suggests that a supply of surface In may well promote 2D island growth during Sb exposure, as seen for sample 1 here.…”

“…The source in the present experiment produces only Sb 4 . Anderson and Millunchick [ 28 ] studied the interaction of Sb 2 and As 2 with InAs(001) at 425 °C and found a rich phase diagram of surface reconstructions both experimentally and using DFT. In nearly all cases, Sb incorporated only in the outermost atomic layer, the exceptions being highly Sb‐rich “Sb‐dimer‐on‐anion” reconstructions such as c (44).…”

“…[24] Typical DFT calculations of Sb films have used isolated slabs. [11,14,15,25] We are not aware of Sb growth studies on either AlSb or InAs (111) surfaces, though (001) heterointerface formation has been investigated, [26][27][28] motivated by interfacial strain and chemical intermixing in conventional IIIÀV superlattice structures, and Sb epitaxy on GaAs(001) has been demonstrated. [29] InAs(111) surfaces are straightforward to prepare and allow direct growth without a buffer layer.…”