Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon

Pritchard, R. E.; Ashwin, M. J.; Tucker, James H. R.; Newman, R. C.; Lightowlers, E C; Binns, M.J.; McQuaid, S.A.; Falster, R.

doi:10.1103/physrevb.56.13118

Cited by 152 publications

(89 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 showed an isotope shift. The frequency ratios of the peaks observed for the specimen implanted with 11 B + to that implanted with 10 B + are about 1.003-1.005. These values are close to the ratio of the square root of the reduced mass for 10 B-H to 11 B-H estimated from Eq.…”

Section: A H and B Related Raman Peaksmentioning

confidence: 94%

“…6 Hydrogen passivation of B in Si is very efficient because the Coulomb attraction between interstitial H + and B − results in a very large capture radius. 7 Thus, almost all B in Si can be passivated by H. 8,9 With increasing concentration of H, hydrogen molecules [10][11][12][13][14] and extended planar defects called platelets 9,15,16 are formed. Furthermore, additional H-͓or deuterium ͑D͔͒ related Raman peaks are observed in the range of 1900-2300 ͑1300-1700͒ cm −1 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

View full text Add to dashboard Cite

The formation of hydrogen ͑H͒ related complexes and their effect on boron ͑B͒ dopant were investigated in B-ion implanted and annealed silicon ͑Si͒ substrates treated with a high concentration of H. Isotope shifts by replacement of 10 B with 11 B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

show abstract

Section: A H and B Related Raman Peaksmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

View full text Add to dashboard Cite

show abstract

“…Interest in the behaviour of molecular hydrogen within silicon has been fuelled by the recent observation of H 2 sited at three distinct environments within crystalline silicon by infrared [1,2] …”

Section: Introductionmentioning

confidence: 99%

“…These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.Interest in the behaviour of molecular hydrogen within silicon has been fuelled by the recent observation of H 2 sited at three distinct environments within crystalline silicon by infrared [1,2] …”

mentioning

confidence: 99%

Molecular hydrogen traps within silicon

Hourahine¹,

Jones

Öberg

et al. 1999

Materials Science and Engineering: B

View full text Add to dashboard Cite

We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.Interest in the behaviour of molecular hydrogen within silicon has been fuelled by the recent observation of H 2 sited at three distinct environments within crystalline silicon by infrared [1,2]

show abstract

“…On the other hand, in n-type P-doped Si, the H atom is located at the anitibonding ͑AB͒ site of the nearest Si neighbor to a P atom, forming a P-Si-H passivation center. [3][4][5]7,9 In addition to the passivation centers, hydrogen molecules [11][12][13][14][15] and extended planar defects called platelets 16,17 are formed with increasing H concentration introduced into Si. The formation of hydrogen molecules and platelets also depends on the types of dopant impurities in Si.…”

mentioning

confidence: 99%

Dopant dependence on passivation and reactivation of carrier after hydrogenation

Fukata

Sato

Morihiro

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

The formation of hydrogen ͑H͒-related complexes and H effects on boron ͑B͒ and phosphorus ͑P͒ dopants was investigated in B-or P-doped silicon ͑Si͒ crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different between the p-type and n-type specimens. The difference is likely to be attributable to the formation of H-related defects based on the stable sites of the H atoms, i.e., complicated H multiple trapping centers are formed by bond breaking due to H atoms in only p-type B-doped Si.

show abstract

Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon

Cited by 152 publications

References 17 publications

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Molecular hydrogen traps within silicon

Dopant dependence on passivation and reactivation of carrier after hydrogenation

Contact Info

Product

Resources

About