Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects

Hull, R.; Stach, Eric A.; Tromp, R. M.; Ross, Frances M.; Reuter, M. C.

doi:10.1002/(sici)1521-396x(199901)171:1<133::aid-pssa133>3.0.co;2-d

Cited by 36 publications

(19 citation statements)

References 33 publications

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“…These TDs then run through the layer progressively relieving the misfit strain. The residual gliding force on them decreases and they eventually stop encountering other defects or local stress field fluctuations [5][6][7]. By appropriate annealing procedures this relaxation process can be pushed toward nearly the full relaxation of the layer, with the final dislocation microstructure resulting in a nearly perfectly-ordered network of MDs placed at the heterointerface [8], approaching the thermodynamic minimum-energy configuration [9].…”

Section: Introductionmentioning

confidence: 99%

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

2020

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Graded layers are widely exploited in semiconductor epitaxy as they typically display lower threading dislocation density with respect to constant-composition layers. However, strain relaxation occurs via a rather complex distribution of misfit dislocations. Here we exploit a suitable computational approach to investigate dislocation distributions minimizing the elastic energy in overcritical constant-composition and graded layers. Predictions are made for SiGe/Si systems, but the methodology, based on the exact (albeit in two dimensions and within linear elasticity theory) solution of the stress field associated with a periodic distribution of defects, is general. Results are critically compared with experiments, when possible, and with a previous mean-field model. A progressive transition from one-dimensional to two-dimensional distributions of defects when continuous linear grading is approached is clearly observed. Interestingly, analysis of the low-energy distribution of dislocations reveals close analogies with typical pile-ups as produced by dislocation multiplication.

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Section: Introductionmentioning

confidence: 99%

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

2020

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“…Even with the surface sensitivity of ECCI, its ability to observe thick epitaxial layers with realistic strain states differentiates it from other in situ techniques. Previous work has modeled thread-misfit interactions thought to be typical during semiconductor growth [33,34], and further studies directly observed these interactions using in situ TEM [35,36]. ECCI enables the extension of this research to samples of bulk thickness, where thread-thread interactions might dominate dislocation pinning.…”

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confidence: 82%

Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon

Callahan

Haidet

Jung

et al. 2018

Phys. Rev. Materials

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“…The results presented in this paper are from a Si 0.7 Ge 0.3 /Si(100) structure with a 30 nm mean film thickness and surface undulations of ∼70 nm wavelength and ∼3 nm amplitude, grown by molecular beam epitaxy at 525 • C and 1Å s −1 growth rate. As grown this film has a very low dislocation density due to the sluggish dislocation kinetics that exist in this system under these growth conditions [13,14], and most of the lattice mismatch stress in the film is retained. Thus on annealing in situ in the TEM, further dislocation propagation occurs, driven by the local excess stress in the film.…”

Section: Experimental and Simulation Detailsmentioning

confidence: 99%

“…In our previous work [14], the following relationship was established between measured misfit dislocation velocity (υ m ) and stress:…”

Section: Introductionmentioning

confidence: 99%

Nanoscale mechanisms of misfit dislocation propagation in undulated Si_1−xGe_x/Si(100) epitaxial thin films

Stach

Hull

2007

Nanotechnology

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Nanoscale lateral variations in the stress field of undulated Si 0.7 Ge 0.3 /Si(100) films have been experimentally studied via in situ transmission electron microscopy annealing and through finite element calculations. When annealed at ∼480 • C, misfit dislocations in a 30 nm film (having surface undulations of ∼70 nm wavelength and ∼3 nm amplitude) propagated at 80 nm s −1 average speed but with periodic variations from 0-30 nm s −1 at the peaks of the undulations to 160-240 nm s −1 at the troughs. A 2.0 GPa average film stress with variations from 3.2 to 4.4 GPa at the troughs to 0.7-1.2 GPa at the peaks is inferred from the observed dislocation velocities. These stress variations are significantly higher than those calculated from a finite element model of Si 0.7 Ge 0.3 /Si with the same surface geometry. Using standard models of dislocation kink dynamics, we have calculated how the effect of high stresses at the undulation troughs would be expected to enhance kink nucleation rates, and have found good agreement between our models and the experimentally observed range of dislocation velocities. These observations demonstrate the potential of probing the nanoscale structure in thin films through local variations of dislocation velocities.

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Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects

Cited by 36 publications

References 33 publications

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon

Nanoscale mechanisms of misfit dislocation propagation in undulated Si_1−xGe_x/Si(100) epitaxial thin films

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Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects

Cited by 36 publications

References 33 publications

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon

Nanoscale mechanisms of misfit dislocation propagation in undulated Si1−xGex/Si(100) epitaxial thin films

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Nanoscale mechanisms of misfit dislocation propagation in undulated Si_1−xGe_x/Si(100) epitaxial thin films