Interactions of photoresist stripping plasmas with nanoporous organo-silicate ultra low dielectric constant dielectrics

Lazzeri, P.; Oehrlein, G. S.; Stueber, G. J.; McGowan, Richard; Busch, Eric; Pederzoli, S.; Jeynes, C.; Bersani, M.; Anderle, M.

doi:10.1016/j.tsf.2007.08.043

Cited by 10 publications

(9 citation statements)

References 14 publications

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“…22 Overall, this shows that temperature-related effects play a minor role during remote plasma processing of the CVD2.8 material. The in-depth distribution and range of penetration of D do not change with temperature.…”

Section: Effects In Silica-rich Organosilicatesmentioning

confidence: 82%

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Time of flight secondary ion mass spectroscopy investigation of ultralow-k dielectric modifications in hydrogen and deuterium plasmas

Lazzeri¹,

Stueber

Oehrlein

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoresist stripping processes based on hydrogen reductive chemistry have emerged as attractive replacements of the conventional treatments performed using O 2 plasma. H 2 discharges and plasma processes based on gas mixtures containing H 2 provide, in fact, adequate stripping rates while reducing the chemical modifications of the porous ultralow-k ͑ULK͒ dielectric materials employed in interconnect technology. In this work the authors investigate the chemical modification of a number of organosilicate low-k dielectrics interacting with remote H 2 plasma. The materials include both spin-on and plasma-enhanced chemical vapor deposited dielectrics with k, porosity, and chemical composition spanning on a broad range of values. The mechanisms of plasma/dielectric reaction and the depth of interaction are evaluated by means of time of flight secondary ion mass spectrometry. In order to study the nature of the plasma/dielectric interactions and the chemical modifications introduced in the ULK materials, deuterium ͑D 2 ͒ is used to substitute for H 2 in the discharge. Although the plasma-generated radicals interact strongly with the materials, negligible stoichiometry modifications are observed during exposure of silica-rich ULK materials. On the other hand, the dielectrics with higher carbon content undergo major compositional changes. The chemical damage introduced by H 2 -based discharges depends strongly on the formulation of the organosilicate material. The substrate temperature is also seen to affect the influx of plasma species. This acts on the extent of material modifications. Nevertheless, the nature of plasma/dielectric interactions does not vary for processes performed in the temperature range of 200-300°C.

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Section: Effects In Silica-rich Organosilicatesmentioning

confidence: 82%

“…22 On the other hand, from the H and D depth profiles reported in Fig. 22 On the other hand, from the H and D depth profiles reported in Fig.…”

Section: Effects In Silica-rich Organosilicatesmentioning

confidence: 94%

Time of flight secondary ion mass spectroscopy investigation of ultralow-k dielectric modifications in hydrogen and deuterium plasmas

Lazzeri¹,

Stueber

Oehrlein

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…With downstream plasma exposure (i.e., no ion bombardment), the damage to the low-k material is significant for O 2 plasmas, but greatly reduced for N 2 plasmas, and there is no measurable damage for H 2 plasmas. The downstream H 2 plasma only reacts with H in the low-k film, in a replacement reaction, without altering the stoichiometry of the film [64]. It has been reported that residues are left after a downstream H 2 plasma strip, which must be removed with a wet clean [63].…”

Section: Dielectric Patterningmentioning

confidence: 99%

“…The TDDB lifetime typically decreases as the dielectric constant of the material decreases [164]. Copper diffusion into the dielectric can be minimized by using adequate metal barrier layers [167,173], minimizing residues after post-CMP cleaning [64], and minimizing air exposure prior to capping of the copper [166,173]. Possible reasons for the lower TDDB lifetime are weaker bonds, higher trap densities, or lower barrier heights at the metalinsulator interface.…”

Section: Time-dependent-dielectric Breakdownmentioning

confidence: 99%

Process Technology for Copper Interconnects

Gambino

2012

Handbook of Thin Film Deposition

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“…1-3, [5][6][7][8][9] Recently, more attention has been focused on the fundamental understanding of low-k modification by active radicals formed in the strip plasma. Active radicals, ion bombardment, and vacuum ultraviolet (VUV) radiation from plasma can play different roles.…”

Section: Introductionmentioning

confidence: 99%

The effect of He plasma treatment on properties of organosilicate glass low-k films

Braginsky

Kovalev

Lopaev

et al. 2011

Journal of Applied Physics

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Articles you may be interested inEffects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Appl. Phys. 116, 044103 (2014); 10.1063/1.4891501Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. Phys. Lett.The effect of low-pressure He plasma on properties of nanoporous organosilicate glasses low-k films with 24% and 33% open porosity is studied. The influence of ions, VUV radiation, and metastable atoms are extracted separately using a special experimental system designed for this purpose. The low-k films treated in He plasma were exposed to O or H atoms in the downstream of high-pressure O 2 or H 2 rf discharge. The changes in chemical composition and structure occurring in low-k films were measured before and after all treatments. The loss probabilities of oxygen and hydrogen atoms on the low-k film surface were measured for both treated and pristine films. It is shown that the film pretreatment in He plasma leads to the noticeable densification of the top surface layer up to complete sealing all the films studied. The sealing layer prevents O atoms from deep penetration to the film bulk and carbon extraction. The sealing mechanism related to the joint impact of low-energy ions and VUV photons with metastable atoms in He plasma is discussed in detail.

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Interactions of photoresist stripping plasmas with nanoporous organo-silicate ultra low dielectric constant dielectrics

Cited by 10 publications

References 14 publications

Time of flight secondary ion mass spectroscopy investigation of ultralow-k dielectric modifications in hydrogen and deuterium plasmas

Time of flight secondary ion mass spectroscopy investigation of ultralow-k dielectric modifications in hydrogen and deuterium plasmas

Process Technology for Copper Interconnects

The effect of He plasma treatment on properties of organosilicate glass low-k films

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