Interactive effects in reactive ion etching of W1−xGex

Abstract

Articles you may be interested inSingle-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation Reactive ion etching characteristics of chemical vapor deposition-deposited W 1Ϫx Ge x alloys in Cl 2 , SF 6 , and SF 6 /O 2 /He plasmas were investigated. The interactive role of the germanium component in the overall etch process was unraveled. To this aim etch rates were studied as a function of the Ge content and at different temperatures. Etched profiles give useful additional information about the nature of the etch mechanism. The underlying surface reactions were more quantitatively identified by x-ray photoelectron spectroscopy on dry etched surfaces.