Interband cascade laser operating cw to 257K at λ=3.7μm

Bewley, W. W.; Nolde, Jill A.; Larrabee, D. C.; Canedy, C. L.; Kim, C. S.; Kim, M.; Vurgaftman, I.; Meyer, J. R.

doi:10.1063/1.2363169

Cited by 23 publications

(9 citation statements)

References 19 publications

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“…Type-II devices progressed more quickly due to the reduced Auger recombination rates stemming from the spatial separation of electrons and holes in the staggered type-II band alignments [46]. ICLs lend themselves well to cascaded designs, much like QCLs, the difference being that the optical transitions occur band-to-band [40], [47], [48]. The development of these devices has been rapid.…”

Section: Highly Strained Mid-infrared Type-i Diode Lasers On Gasbmentioning

confidence: 97%

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Sifferman

Nair

Salas

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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We describe how growth at low temperatures can enable increased active layer strain in GaSb-based type-I quantum-well diode lasers, with emphasis on extending the emission wavelength. Critical thickness and roughening limitations typically restrict the number of quantum wells that can be grown at a given wavelength, limiting device performance through gain saturation and related parasitic processes. Using growth at a reduced substrate temperature of 350 °°°°C, compressive strains of up to 2.8% have been incorporated into GaInAsSb quantum wells with GaSb barriers; these structures exhibited peak room-temperature photoluminescence out to 3.96 μm. Using this growth method, low-threshold ridge waveguide lasers operating at 20 °C and emitting at 3.4 μm in pulsed mode were demonstrated using 2.45% compressively strained GaInAsSb/GaSb quantum wells. These devices exhibited a characteristic temperature of threshold current of 50 K, one of the highest values reported for type-I quantum-well laser diodes operating in this wavelength range. This temperature stability is attributable to the increased valence band offset afforded by the high strain values, due to the simultaneously high quantum well indium and antimony mole fractions. Exploratory experiments using bismuth both as a surfactant during quantum well growth, as well as in dilute amounts incorporated into the crystal were also studied. Both methods appear promising avenues to surmount current strain-related limitations to laser performance and emission wavelength.

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Section: Highly Strained Mid-infrared Type-i Diode Lasers On Gasbmentioning

confidence: 97%

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Sifferman

Nair

Salas

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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“…4͒ and lattice matched InGaAs/ AlAsSb, 5 only one QCL operating continuous wave ͑cw͒ at room temperature and at wavelengths below 4.0 m has been reported. 6 The longest wavelength for room temperature cw operation for a type I interband diode is ϳ3.1 m, 7 whereas maximum cw operating temperatures of 264, 8 257, 9 and finally 269 K, 10 at emission wavelengths of 3.3, 3.7, and 4.05 m, respectively, have been achieved recently by interband cascade lasers ͑ICLs͒, which have also achieved cw power outputs above 1 W at 78 K. 11 The aluminum-indium-gallium-antimonide ͑Al x Ga y In 1−x−y Sb͒ material system offers great promise for efficient diode laser operation across the 3 -5 m wavelength range. It offers an excellent compromise between the requirements for good electronic and optical confinement and those for low series resistance, and the use of an active region comprising compressively strained type I quantum wells is predicted to lead to increased gain, which leads to lower threshold current densities and hence reduced nonradiative Auger recombination.…”

mentioning

confidence: 99%

Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs

Nash

Smith

Coomber

et al. 2007

Applied Physics Letters

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The realization of midinfrared GaInSb/ AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ϳ3.5 m, threshold current density of 115 A / cm 2 , and with a characteristic temperature T 0 ϳ 51 K. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2793821͔ Midinfrared semiconductor lasers that can operate at or near room temperature would have a wide range of potential applications in health care, environmental monitoring, manufacturing, security, and defense. For example, the favorable atmospheric transmission characteristics at these wavelengths, including low atmospheric scattering and absorption 1 relative to shorter wavelengths, would make them attractive for secure free-space communications in a range of security and military applications, in particular, for communication via low orbit satellites or unmanned aerial vehicles. However, for most of the important 3 -4 m spectral band, there are currently no practical high-temperature semiconductor lasers. Although much progress has been made in the development of "short wavelength" quantum cascade lasers ͑QCLs͒, with room temperature pulsed laser emission at a wavelength of 4.1 m in InGaAs/ AlAsSb/ InP strain compensated devices, 2 240 K pulsed laser emission at ϳ 3.2 m from InAs/ AlSb devices, 3 and low temperature pulsed laser operation at ϳ 3.1 m for both InP based strain compensated InGaAs/ InAlAs/ AlAs ͑Ref. 4͒ and lattice matched InGaAs/ AlAsSb, 5 only one QCL operating continuous wave ͑cw͒ at room temperature and at wavelengths below 4.0 m has been reported. 6 The longest wavelength for room temperature cw operation for a type I interband diode is ϳ3.1 m, 7 whereas maximum cw operating temperatures of 264, 8 257, 9 and finally 269 K, 10 at emission wavelengths of 3.3, 3.7, and 4.05 m, respectively, have been achieved recently by interband cascade lasers ͑ICLs͒, which have also achieved cw power outputs above 1 W at 78 K. 11

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“…The range 2500-nm to 4500-nm is more challenging (as discussed later), and is currently the subject of intense research, with sources demonstrated only under cryogenic conditions to date [14]. A helpful recent review of semiconductor sources in the range > 1500-nm is given by [15].…”

Section: Wavelength Of Absorption Tinesmentioning

confidence: 99%

“…Figure 8 also shows an estimate of the lower possible lasing wavelength of these quantum cascade laserswhich is at approximately 4000-nm. There is currently no semiconductor laser design or material which can deliver high performance at room temperature in this intermediate wavelength range of 2500-nm to 4000-nm, although there are designs that operate well at cryogenic temperatures [14]. …”

mentioning

confidence: 99%

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

et al. 2007

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Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635-nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gaps from 1100 to 1280-nm, and above 1500-nm. There are many important medical and sensing applications in the 12xx-nm range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

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Interband cascade laser operating cw to 257K at λ=3.7μm

Cited by 23 publications

References 19 publications

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

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