Interband Critical Point Parameters Determined by Ellipsometry in CdxHg1−xSe

Kumazaki, K.; Viña, L.; Umbach, C. P.; Cardona, M.

doi:10.1002/pssb.2221560138

Cited by 23 publications

(7 citation statements)

References 17 publications

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“…SE is an excellent technique for investigating the optical response of semiconductors [16,17]. SE can be used as a tool for characterizing and understanding the physical properties of materials, particularly used in conjunction with other techniques.…”

Section: Introductionmentioning

confidence: 99%

Optical constants of DC magnetron sputtered titanium dioxide thin films measured by spectroscopic ellipsometry

Karunagaran¹,

Kumar

Viswanathan

et al. 2003

Cryst. Res. Technol.

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Optical constants of DC magnetron sputtered TiO 2 thin film have been determined by Spectroscopic Ellipsometry in the photon energy range 1.2 to 5.5 eV at room temperature. The measured dielectric-function spectra reveal distinct structures at energies of the E1, E1+∆1 and E2 critical points are due to interband transitions. The root mean square roughness of the magnetron sputtered TiO 2 thin films evaluated by ex-situ atomic force microscopy is 5.8 nm. The Dielectric constant values were found to be substantially lower than those for the bulk TiO 2 . The dielectric related Optical constants, such as the refractive index, extinction coefficient, absorption coefficient and normal incidence of reflectivity determined from the spectroscopic ellipsometry data are presented and analyzed. The optical constants of the films were also determined using the optical transmittance measurements and the results were discussed.

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Section: Introductionmentioning

confidence: 99%

Optical constants of DC magnetron sputtered titanium dioxide thin films measured by spectroscopic ellipsometry

Karunagaran¹,

Kumar

Viswanathan

et al. 2003

Cryst. Res. Technol.

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“…The spectral resolution of the monochromator was about 4.2 cm -1 . The spectra were recorded using a microprocessor based automated data collection system with a step of 0.5 cm -1 and a collection time of 10 s. Spectroscopic Ellipsometry (SE) is an excellent technique for investigating the optical response of semiconductors (LOGOTHETIDIS et al 1986;LAUTENSCHLAGER et al 1985;KUMAZAKI et al 1989;SADAO ADACHI and TAGUCHI 1991). It can be used to some effect as a tool for characterizing and understanding the physical properties of materials, particularly used in conjunction with other techniques.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Sridharan

Narayandass

Mangalaraj

et al. 2002

Cryst. Res. Technol.

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Cd0.96Zn0.04Te thin films are deposited onto well cleaned glass substrates (Corning 7059) kept at room temperature by vacuum evaporation and the films are annealed at 423 K. Rutherford Backscattering Spectrometry and X‐ray diffraction techniques are used to determine the thickness, composition and crystalline structure and grain size of the films respectively. The films exhibited zinc blende structure with predominant (111) orientation. The surface morphology of the films is studied by Atomic Force Microscopy. The rms roughness of the as‐deposited films is 3.7 nm and on annealing the films at 423K, the rms roughness value decreases to 3.4 nm. The Raman spectra of the Cd0.96Zn0.04Te films are recorded at room temperature to study lattice vibrations and their interactions with other excitations. The intensity of the peak increases and the FWHM decreases on annealing the films. The pseudodielectric‐function spectra, ε(E) = ε1(E) + i ε2(E), of polycrystalline Cd0.96Zn0.04Te thin films in the 1.3 ‐ 5.5eV photon energy range at room temperature are measured by spectroscopic ellipsometry. The measured dielectric function spectra reveal distinct structures at energies of the E1, E1+Δ1 and E2 critical points are due to interband transitions.

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“…The SE «(E) spectra for c-Cd x Hg 1Àx Se (x ¼ 0-0.3) have also been measured in the 1.7-5.6 eV region at 300 K [231].…”

Section: (F) Cdhgsementioning

confidence: 99%

Optical Properties

2009

Properties of Semiconductor Alloys

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The complex dielectric function «ðEÞ ¼ « 1 ðEÞ þ i« 2 ðEÞ ð 10:1Þcan be used to describe the optical properties of the medium at all photon energiesThe complex refractive index n Ã (E) can also be given bywhere n(E) is the ordinary (real) refractive index and k(E) is the extinction coefficient. From Equation (10.2), we obtain Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

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Interband Critical Point Parameters Determined by Ellipsometry in Cd_xHg_1−xSe

Cited by 23 publications

References 17 publications

Optical constants of DC magnetron sputtered titanium dioxide thin films measured by spectroscopic ellipsometry

Optical constants of DC magnetron sputtered titanium dioxide thin films measured by spectroscopic ellipsometry

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

Optical Properties

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