Interconversion of intrinsic defects in 
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Chambers, Scott A.; Du, Y.; Zhu, Zihua; Wang, J.; Wahila, Matthew J.; Piper, Louis F. J.; Prakash, Abhinav; Yue, Jin; Jalan, Bharat; Spurgeon, Steven R.; Kepaptsoglou, Demie; Ramasse, Quentin M.; Sushko, Peter V.

doi:10.1103/physrevb.97.245204

Cited by 23 publications

(14 citation statements)

References 60 publications

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“…For single-crystal STO (dashed line), two in-gap states are observed whereas for the STO films the state at 2.5 eV binding energy has disappeared. Both in-gap states are known to originate from defects [31,32]. The different in-gap states suggests a different defect structure of our PLD-grown STO films when compared to STO crystals.…”

Section: A Films On Highly Doped Substratementioning

confidence: 99%

Single spin-polarized Fermi surface in SrTiO3 thin films

Guedes

Muff

Fanciulli

et al. 2020

Phys. Rev. Research

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The 2D electron gas (2DEG) formed at the surface of SrTiO 3 (001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection, we here show that the band filling can be controlled by growing thin SrTiO 3 films on Nb-doped SrTiO 3 (001) substrates. This results in a single spin-polarized 2D Fermi surface, which bears potential as a platform for Majorana physics. Based on our results, it can furthermore be concluded that the 2DEG does not extend more than two unit cells into the film and that its properties depend on the amount of SrO x at the surface and possibly the dielectric response of the system.

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Section: A Films On Highly Doped Substratementioning

confidence: 99%

Single spin-polarized Fermi surface in SrTiO3 thin films

Guedes

Muff

Fanciulli

et al. 2020

Phys. Rev. Research

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“…Finally, we note that the ability to map band-edge profiles is especially important if there is no a priori knowledge of the direction that electronic charge will flow upon junction formation. This is the situation for heterostructures involving materials such as complex oxides because complex oxides can contain electrically active defects that trap charge and generate internal electric fields not anticipated by the design of the material system 35 . The formation of such defects can be driven by non-equilibrium synthesis conditions which, in turn, underscores the challenges of predicting band bending and band offsets on the basis of equilibrium theoretical models alone.…”

Section: Discussionmentioning

confidence: 99%

Extracting band edge profiles at semiconductor heterostructures from hard-x-ray core-level photoelectron spectra

Sushko

Chambers

2020

Sci Rep

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Internal electric fields that underpin functioning of multi-component materials systems and devices are coupled to structural and compositional inhomogeneities associated with interfaces in these systems. Hard-x-ray photoelectron spectroscopy is a valuable source of information on band-edge profiles, governed by the distribution of internal fields, deep inside semiconductor thin films and heterojunctions. However, extracting this information requires robust and physically meaningful decomposition of spectra into contributions from individual atomic planes. We present an approach that utilizes the physical requirements of a monotonic dependence of the built-in electrostatic potential on depth and continuity of the potential function and its derivatives. These constraints enable efficient extraction of band-edge profiles and allow one to capture details of the electronic structure, including determination of the signs and magnitudes of the band bending as well as the valence band offsets. The utility of this approach to generate quantitative insight into the electronic structure of complex materials is illustrated for epitaxial SrTiO 3 on intrinsic Si(001).

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“…The Sr vacancies left behind at the interface trap itinerant electrons from the 2DEG upon formation, which is consistent with the diminished Ti 3+ signature observed in the Ti 2 p spectra. [ 63 ] The spectral data reveal that this process is fully reversible, indicating that Sr moves from the interface to the surface and back again as the oxygen gas activity is cycled.…”

Section: Figurementioning

confidence: 99%

Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces

et al. 2020

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The ability to tailor oxide heterointerfaces has led to novel properties in low‐dimensional oxide systems. A fundamental understanding of these properties is based on the concept of electronic charge transfer. However, the electronic properties of oxide heterointerfaces crucially depend on their ionic constitution and defect structure: ionic charges contribute to charge transfer and screening at oxide interfaces, triggering a thermodynamic balance of ionic and electronic structures. Quantitative understanding of the electronic and ionic roles regarding charge‐transfer phenomena poses a central challenge. Here, the electronic and ionic structure is simultaneously investigated at the prototypical charge‐transfer heterointerface, LaAlO3/SrTiO3. Applying in situ photoemission spectroscopy under oxygen ambient, ionic and electronic charge transfer is deconvoluted in response to the oxygen atmosphere at elevated temperatures. In this way, both the rich and variable chemistry of complex oxides and the associated electronic properties are equally embraced. The interfacial electron gas is depleted through an ionic rearrangement in the strontium cation sublattice when oxygen is applied, resulting in an inverse and reversible balance between cation vacancies and electrons, while the mobility of ionic species is found to be considerably enhanced as compared to the bulk. Triggered by these ionic phenomena, the electronic transport and magnetic signature of the heterointerface are significantly altered.

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Interconversion of intrinsic defects in SrTiO3(001)

Cited by 23 publications

References 60 publications

Single spin-polarized Fermi surface in SrTiO3 thin films

Single spin-polarized Fermi surface in SrTiO3 thin films

Extracting band edge profiles at semiconductor heterostructures from hard-x-ray core-level photoelectron spectra

Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces

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