2021
DOI: 10.1038/s41467-021-22808-7
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Interconversion of multiferroic domains and domain walls

Abstract: Systems with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain walls. A change of the ordered state across a domain wall can lead to local non-bulk physical properties such as enhanced conductance or the promotion of unusual phases. Although highly desirable, controlled transfer of these properties between the bulk and the spatially confined walls is … Show more

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Cited by 19 publications
(9 citation statements)
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“…[54] In addition, unusual AC responses can be expected to arise at multiferroic domain walls with coupled electric and magnetic degrees of freedom. [59,[276][277][278] The potential of domain-wall multiferroicity and magnetoelectricity is reflected by different theoretical studies as performed, for example, by Artyukhin et al, [279] and Das et al [280] on hexagonal manganites. In multiferroics, [281] the intricate interplay of charge, spin, and lattice degrees of freedom, combined with emergent low-symmetry and confinement effects at domain walls, potentially enables a rich variety of AC phenomena that remain to be explored experimentally.…”
Section: Conclusion and Future Perspectivementioning
confidence: 99%
See 1 more Smart Citation
“…[54] In addition, unusual AC responses can be expected to arise at multiferroic domain walls with coupled electric and magnetic degrees of freedom. [59,[276][277][278] The potential of domain-wall multiferroicity and magnetoelectricity is reflected by different theoretical studies as performed, for example, by Artyukhin et al, [279] and Das et al [280] on hexagonal manganites. In multiferroics, [281] the intricate interplay of charge, spin, and lattice degrees of freedom, combined with emergent low-symmetry and confinement effects at domain walls, potentially enables a rich variety of AC phenomena that remain to be explored experimentally.…”
Section: Conclusion and Future Perspectivementioning
confidence: 99%
“…[ 54 ] In addition, unusual AC responses can be expected to arise at multiferroic domain walls with coupled electric and magnetic degrees of freedom. [ 59,276–278 ] The potential of domain‐wall multiferroicity and magnetoelectricity is reflected by different theoretical studies as performed, for example, by Artyukhin et al., [ 279 ] and Das et al. [ 280 ] on hexagonal manganites.…”
Section: Conclusion and Future Perspectivementioning
confidence: 99%
“…Among the materials for these applications, particularly of interest are bulk and nanosized multiferroic BiFeO3 (BFO) [ 9 , 10, 11, 12, 13, 14]. Advances in applications necessitate fundamental understanding of FE, AFE and AFD order parameter dynamics in the materials, which in turn necessitates both the study of mesoscale phenomena such as local polarization switching, topological defects, and atomic scale phenomena at surfaces and interfaces [15,16,17,18]. On the nanometer scale, the breakthrough in understanding the functional properties of ferroics and multiferroics have been achieved via Scanning Probe Microscopy studies, such as Piezoresponse Force Microscopy (PFM) [ 19 , 20 ], and High-Resolution Scanning Transmission Electron Microscopy (HR STEM) [21,22,23,24].…”
Section: Introductionmentioning
confidence: 99%
“…Multiferroics -solid state ferroic materials with coupled and ferromagnetic and antiferromagnetic, ferroelectric and antiferroelectric, or other type long-range ordering [1,2] -have been for many years explored from a fundamental perspective [3,4,5], including recent studies of unusual polarization switching in thin films [6], domain wall conduction [7] and atomic scale phenomena at surfaces and interfaces [8,9,10,11]. These materials are also beginning to find potential applications for applications, such as the concepts of ferroelectric tunneling barriers, light-assisted ferroic dynamics, spin-driven effects, and ultrafast magnetoelectric switching for memory [12,13,14].…”
Section: Introductionmentioning
confidence: 99%