Interdiffusion in Pb1−xEuxSe/PbSe multi-quantum-well structures

Springholz, G.; Holzinger, Alexandra; Krenn, H.; Clemens, Helmut; Bauer, G.; Böttner, H.; Norton, P. R.; Maier, Max

doi:10.1016/0022-0248(91)90095-m

Cited by 17 publications

(5 citation statements)

References 7 publications

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“…Table 1 shows that with an increase of x, a very small change in the d-spacing for the investigated films is observed. These results are in contrast to the published data [12]. A relatively weak dependence of the interplanar spacing on the europium content d(x) was also observed for the Pb 1−x Eu x Se films grown on the glass substrates [3].…”

Section: Structural Characteristics and Deformation Phenomena In Pb 1...contrasting

confidence: 99%

“…The interplanar spacing d exp was calculated for the Pb 1−x Eu x Se (1 1 1) reflection using the Rechinger method (the shapes of the lines for the Kα1 and Kα2 lines are analogous, and their intensities relate as I Kα1 :I Kα2 = 2:1) [11]. The lattice constant value a 0 for Pb 1−x Eu x Se was found according to [12] and the interplanar distance value d 0 = a 0 /3 1/2 . These values are shown in table 1.…”

Section: Structural Characteristics and Deformation Phenomena In Pb 1...mentioning

confidence: 99%

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Structural properties of Pb₁₋_xEu_xSe/CaF₂/Si (1 1 1)

Zimin¹,

Bogoyavlenskaya²,

Горлачев³

et al. 2007

Semicond. Sci. Technol.

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X-ray, Auger-electron spectroscopy, scanning electron microscopy and atomic force microscopy investigations of the Pb 1−x Eu x Se film structure with variation of x from 0.00 to 0.16 were carried out. The 2-4 µm thick films were grown on Si (1 1 1) substrates with a CaF 2 buffer layer by molecular beam epitaxy. We show that the films have a high structural perfection degree for all x values. Triangular terraces and exit pits of threading dislocations were found on the film surfaces. The x-ray peaks of CaF 2 (1 1 1) and Si (1 1 1) are distinguished and correlated with the Eu penetration into the volume of the thin buffer layer. A tensile in-plane strain ε II in the Pb 1−x Eu x Se films is calculated to be equal to 0.15%-0.24%. The microstrain value ε in the Si near-surface layers was found to be equal to (4.2 ± 1.0) × 10 −5 . The surface morphology of the films changes after high-density inductively coupled argon plasma processing is described. The role of threading dislocations and terraces on the morphology modification of the surface during plasma treatment is shown.

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Section: Structural Characteristics and Deformation Phenomena In Pb 1...contrasting

confidence: 99%

Section: Structural Characteristics and Deformation Phenomena In Pb 1...mentioning

confidence: 99%

Structural properties of Pb₁₋_xEu_xSe/CaF₂/Si (1 1 1)

Zimin¹,

Bogoyavlenskaya²,

Горлачев³

et al. 2007

Semicond. Sci. Technol.

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“…This surprising observation is attributed to the increased nonradiative carrier recombination in the QWs due to intermixing of Eu at the heterointerfaces, as evidenced by x-ray and secondary ion mass spectroscopy experiments. 9 This is consistent with the general fact that the carrier mobilities in PbTe/PbEuTe MQWs are always significantly lower than those measured for bulklike epilayers with corresponding low-temperature mobilities of typically 80 000 to 200 000 cm 2 /V s for the MQWs, 10 as compared to values of 1 000 000 cm 2 /V s and above for PbTe epilayers. This interpretation is further supported by the observation of a very rapid drop in the PL efficiency of bulklike Pb 1Ϫx Eu x Te epilayers with increasing Eu content demonstrated in the inset of Fig.…”

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confidence: 81%

Midinfrared continuous-wave photoluminescence of lead–salt structures up to temperatures of 190 °C

Böberl

Heiß

Schwarzl

et al. 2003

Applied Physics Letters

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Continuous-wave photoluminescence in the midinfrared for PbSe/PbEuSe and PbTe/PbEuTe multiquantum well structures as well as for PbSe and PbTe bulklike structures, excited by a semiconductor laser diode, is investigated. All samples are grown by molecular-beam epitaxy on BaF2(111) substrates under the same growth conditions. Both for the Te-based systems and for the Se-based systems, it turns out that bulklike structures show photoluminescence up to higher temperatures than multiquantum well structures. In particular, emission spectra from PbTe/PbEuTe multiquantum wells are obtained up to temperatures of 200 K and from PbSe/PbEuSe multiquantum well structures up to 60 °C whereas for bulklike PbSe photoluminescence at temperatures as high as 190 °C is demonstrated.

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“…This is further confirmed by previous secondary ion mass spectroscopy measurements on similar superlattices shown in ref. [56]. More evidence of the excellent quality of the samples is provided in the supplementary material (S4) [33] where we estimate the sample mobility by analyzing the linewidth [57] of magnetooptical transitions.…”

Section: Discussionmentioning

confidence: 99%

Tunable Dirac interface states in topological superlattices

et al. 2018

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Relativistic Dirac fermions are ubiquitous in condensed-matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the massless Dirac states that occur at material surfaces. In this paper, we experimentally and theoretically introduce a platform where this hybridization can be continuously tuned: the Pb1-xSnxSe topological superlattice. In this system, topological Dirac states occur at the interfaces between a topological crystalline insulator Pb1-xSnxSe and a trivial insulator, realized in the form of topological quantum wells (TQW) epitaxially stacked on top of each other. Using magnetooptical transmission spectroscopy on high quality molecular beam epitaxy grown Pb1-xSnxSe superlattices, we show that the penetration depth of the TQW interface states and therefore their Dirac mass is continuously tunable with temperature. This presents a pathway to engineer the Dirac mass of topological systems and paves the way towards the realization of emergent quantum states of matter using Pb1-xSnxSe topological superlattices. I.

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Interdiffusion in Pb1−xEuxSe/PbSe multi-quantum-well structures

Cited by 17 publications

References 7 publications

Structural properties of Pb₁₋_xEu_xSe/CaF₂/Si (1 1 1)

Structural properties of Pb₁₋_xEu_xSe/CaF₂/Si (1 1 1)

Midinfrared continuous-wave photoluminescence of lead–salt structures up to temperatures of 190 °C

Tunable Dirac interface states in topological superlattices

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Interdiffusion in Pb1−xEuxSe/PbSe multi-quantum-well structures

Cited by 17 publications

References 7 publications

Structural properties of Pb1−xEuxSe/CaF2/Si (1 1 1)

Structural properties of Pb1−xEuxSe/CaF2/Si (1 1 1)

Midinfrared continuous-wave photoluminescence of lead–salt structures up to temperatures of 190 °C

Tunable Dirac interface states in topological superlattices

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Product

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Structural properties of Pb₁₋_xEu_xSe/CaF₂/Si (1 1 1)

Structural properties of Pb₁₋_xEu_xSe/CaF₂/Si (1 1 1)