2017
DOI: 10.1016/j.jmmm.2016.08.020
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Interface adjustment and exchange coupling in the IrMn/NiFe system

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Cited by 15 publications
(16 citation statements)
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“…In [47][48][49][50][51][52][53][54], the EB effect was reported in AFM/SG systems. In [49,50,55], a spin glass (SG), such as disorder, was suggested to occur at the FM-AFM interface. In [45], spin clusters such as SG states were suggested to present at the interface of layered polycrystalline thin films.…”
Section: Magnetic Measurements Of the S1 And S2 Core-shell Nanoparticlesmentioning
confidence: 99%
“…In [47][48][49][50][51][52][53][54], the EB effect was reported in AFM/SG systems. In [49,50,55], a spin glass (SG), such as disorder, was suggested to occur at the FM-AFM interface. In [45], spin clusters such as SG states were suggested to present at the interface of layered polycrystalline thin films.…”
Section: Magnetic Measurements Of the S1 And S2 Core-shell Nanoparticlesmentioning
confidence: 99%
“…Although, EB as an interfacial interaction between FM and AFM is widely studied [8] but the 'bulk' spin contribution to EB is still not fully established [9]. However, EB effects have been widely explored for the fundamental understanding and for its technological applications in constructing spintronic based devices such as spin valves, and magnetic random-access memories (MRAMs) etc [6,[9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…The presence of interfacial spins and their behaviour play critical role for the origin of EB and the training effect where EB decreases with number of cycles of hysteresis loop measurement. It is reported in literature that the interface of the FM and AFM phase can be spin glass (SG) like disorder [12], compensated AFM order or uncompensated FM order. The structural disorder [12], interface roughness [13], chemical intermixing [13], interdiffusion [13] and lack of structural periodicity [12] might be a reason for this glassy state at the interface.…”
Section: Introductionmentioning
confidence: 99%
“…Для систем, где плоскость интерфейса однородно покрыта лишь одним атомным слоем NM, обменное смещение при низких температурах существует, но при комнатной температуре полностью исчезает [17]. Изучались температурные зависимости обменного смещения при различных толщинах немагнитной прослойки [18], но эти данные были получены лишь для узкого диапазона толщин немагнитной прослойки, который не охватывал все ситуации от полностью непокрытого до полностью покрытого слоя NM. Наконец, известно, что наличие немагнитного слоя способно влиять на рост, качество и текстурирование ферромагнитного и антиферромагнитного слоев, радикально изменяя свойства готового прибора [19].…”
Section: Introductionunclassified