Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

Nath, Madhuchhanda; Roy, Asim

doi:10.1016/j.physb.2015.12.007

Cited by 26 publications

(12 citation statements)

References 44 publications

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“…The C-V-f plots show a peak in the negative voltage regime (Figure 8). The observed peaks decrease in magnitude with increasing frequency, the presence of interface states is responsible for this phenomenon [45][46][47]. We observe that the interface charges have negligible effects on the capacitive behavior of the photodiode at higher frequencies.…”

Section: Transient Photocurrent Capacitance-voltage and Conductance-voltage Characteristics Of X % Ni-inzno (Nizo) Thin Filmmentioning

confidence: 61%

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Mensah-Darkwa¹,

Dere²,

Al‐Sehemi³

et al. 2019

J. Solar Eneg. Res. Updat.

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This report presents the fabrication and characterization of x % Ni - InZnO (NIZO) Schottky diodes. The structural, optical and electrical properties of the fabricate Al/p-Si / x % Ni - InZnO /Au photodiodes were investigated. An average visible transmittance of about 75% - 85% has been obtained in the visible-light to near-infrared wavelength region. The optical bandgap was 3.17 ± 0.02 eV. Current-Voltage measurements were conducted to analyze the photodiode behavior under dark and light illumination. The reverse bias current increases together with increasing light illumination. The observed I-V results confirm the photoconductive and photovoltaic properties of the fabricated diode. There is an exponential relationship between the current and the voltage in the forward bias, confirming the rectification performance of the photodiode. The electrical properties of the fabricated photodiodes were evaluated using Cheung- Cheung and Norde’s methods. The transient photocurrent, capacitance-voltage-frequency and conductance-voltagefrequency plots indicate that the diode is very sensitive to light illumination. We also observe a strong correlation between capacitance and conductance on frequency, this was explained based on the presence of interface states. The obtained results suggest that the Ni-doped InZnO photodiodes can be useful in photovoltaic and optoelectronic applications.

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Section: Transient Photocurrent Capacitance-voltage and Conductance-voltage Characteristics Of X % Ni-inzno (Nizo) Thin Filmmentioning

confidence: 61%

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Mensah-Darkwa¹,

Dere²,

Al‐Sehemi³

et al. 2019

J. Solar Eneg. Res. Updat.

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“…Nath and Roy investigated the effects of annealing temperature on HfO 2 thin films grown by radio frequency sputtering. From the I-V analyses, the lowest leakage current density of 1.5 × 10 −5 A/cm 2 was measured at −2 V at 600 • C. According to C-V analyses at the same annealing temperature, the highest dielectric constant κ = 14 and the lowest EOT=1.3 nm were obtained [72].…”

Section: Fabrication Methodsmentioning

confidence: 97%

“…of results of different coating methods[43,58,[62][63][64][65][66][67][68][69][70][71][72][73][74][75][76]. × 10 −8 A/cm 2 at 1 V EOT= 2.73 nm at 700 • C…”

mentioning

confidence: 99%

Hf-Based High-κ Dielectrics: A Review

KOL

Oral

2019

Acta Phys. Pol. A

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In the last decades, the number of transistors per chip with integrated circuits has increased leading to reduction in the thickness of silicon dioxide used as gate dielectrics. However, at small dielectric thicknesses leakage current formation has begun due to the quantum tunneling effect. Thus, it became essential to replace SiO2 with alternative dielectrics with high dielectric constant to maintain the same capacitance at higher gate dielectric thicknesses. This review analyzes alternative high-κ dielectric materials substituting for SiO2. For this reason, the properties of materials with high dielectric constant are compared to SiO2 with a special emphasis on HfO2, since it is the most promising high-κ dielectric to replace SiO2. The fundamental points concerning HfO2 gate dielectrics are their high dielectric constant and their thermodynamic stability when in contact with Si. In this article, properties of HfO2 fabricated with different coating methods and doped with different elements such as N, Si, Al, Ti and Ta have been compared and discussed. In the conclusion part, we have summarized the results of characterization obtained by X-ray diffraction, scanning electron microscopy, leakage current density-voltage (J-V ), capacitance-voltage (C-V ) and UV-vis spectroscopy of HfO2 thin films.

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“…Figure 4C reveals the O 1s XPS spectra of the HfO 2 films formed at various pO 2 levels. For the films formed at the pO 2 of 5 × 10 −4 Torr, the O 1s peak is located at around 530.0 eV, indicating that oxygen is in the fully oxidized form of Hf–O 19 . The HfO 2 films formed at pO 2 values of 1 × 10 −4 and 8 × 10 −5 Torr exhibited a shift in the O 1s peak toward higher energy values.…”

Section: Compositional Analysismentioning

confidence: 95%

Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films

Sunke

Chandra

Chalapathi

et al. 2020

Surface & Interface Analysis

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HfO2 films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxygen partial pressure on chemical composition, crystallographic structure, and optical properties of HfO2 films was systematically investigated. X‐ray photoelectron spectroscopy and energy dispersive X‐ray analysis were employed to determine the chemical composition. The films formed at oxygen partial pressure of 5 × 10−4 Torr were of stoichiometric HfO2. X‐ray diffractometer studies revealed that the films formed at 5 × 10−4 Torr were weakly crystallized with monoclinic structure. Optical bandgap of the HfO2 films increased with increasing oxygen partial pressure. Metal oxide semiconductor structures with configuration of Al/HfO2/p‐Si were fabricated and studied its dielectric and electrical properties. From these studies, it is confirmed that HfO2 film‐based metal oxide semiconductor devices formed at an optimum oxygen partial pressure of 5 × 10−5 Torr showed dielectric constant of 13 with leakage current density of 4.7 × 10−7 A/cm2.

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Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering

Cited by 26 publications

References 44 publications

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Optoelectrical Properties of NiInZnO (NIZO) Thin Films

Hf-Based High-κ Dielectrics: A Review

Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films

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